N-CHANNEL MOSFET. STB16N90K5 Datasheet


STB16N90K5 MOSFET. Datasheet pdf. Equivalent


Part Number

STB16N90K5

Description

N-CHANNEL MOSFET

Manufacture

STMicroelectronics

Total Page 20 Pages
Datasheet
Download STB16N90K5 Datasheet


STB16N90K5
STB16N90K5
Datasheet
N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET
in a D²PAK package
TAB
2
3
1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
VDS
STB16N90K5
900 V
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
RDS(on) max.
330 mΩ
ID
15 A
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5
technology based on an innovative proprietary vertical structure. The result is a
dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.
Product status link
STB16N90K5
Product summary
Order code
STB16N90K5
Marking
16N90K5
Package
D²PAK
Packing
Tape and reel
DS12802 - Rev 2 - August 2019
For further information contact your local STMicroelectronics sales office.
www.st.com

STB16N90K5
STB16N90K5
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
ID (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
dv/dt (3) MOSFET dv/dt ruggedness
Tj Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 15 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS, VDD= 450 V.
3. VDS ≤ 720 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-pcb (1) Thermal resistance junction-pcb
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
±30
15
9
60
190
4.5
50
-55 to 150
Unit
V
A
A
A
W
V/ns
°C
Value
0.66
30
Unit
°C/W
°C/W
Value
5
380
Unit
A
mJ
DS12802 - Rev 2
page 2/20


Features STB16N90K5 Datasheet N-channel 900 V, 28 0 mΩ typ., 15 A MDmesh K5 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Featur es Order code VDS STB16N90K5 900 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of m erit) • Ultra-low gate charge • 100 % avalanche tested • Zener-protected RDS(on) max. 330 mΩ ID 15 A Applica tions • Switching applications Descr iption This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative pr oprietary vertical structure. The resul t is a dramatic reduction in on-resista nce and ultra-low gate charge for appli cations requiring superior power densit y and high efficiency. Product status link STB16N90K5 Product summary Order code STB16N90K5 Marking 16N90K5 Pa ckage D²PAK Packing Tape and reel DS12802 - Rev 2 - August 2019 For furth er information contact your local STMic roelectronics sales office. www.st.com STB16N90K5 Electrical ratings 1 Electrical.
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