Document
FDBL0630N150
MOSFET – N-Channel, POWERTRENCH)
150 V, 169 A, 6.3 mW
Features
• Typ rDS(on) = 5 mW at VGS = 10 V, ID = 80 A • Typ Qg(tot) = 70 nC at VGS = 10 V, ID = 80 A • UIS Capability • This Device is Pb−Free and is RoHS Compliant
Applications
• Industrial Motor Drive • Industrial Power Supply • Industrial Automation • Battery Operated tools • Battery Protection • Solar Inverters • UPS and Energy Inverters • Energy Storage • Load Switch
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol
Parameter
Ratings
Unit
VDSS Drain to Source Voltage
150 V
VGS Gate to Source Voltage
±20 V
ID EAS
Drain (Note
Current 1)
−
Continuous
(VGTSC==1205°VC)
Pulsed Drain Current
TC = 25°C
Single Pulse Avalanche Energy (Note 2)
169
See Figure 4 502
A mJ
PD Power Dissipation Derate above 25°C
500 W 3.3 W/°C
TJ, TSTG Operating and Storage Temperature
−55 to +175 °C
RqJC Thermal Resistance Junction to Case
0.3 °C/W
RqJA
Maximum Thermal Resistance Junction to Ambient (Note 3)
43 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by junction temperature.
2. Starting TJ = 25°C, L = 0.24 mH, IAS = 64 A, VDD = 100 V during inductor
charging and VDD = 0 V during time in avalanche.
3.
rReqsJiAstiasntchee
sum of the junction−to−case and case−to−ambient thermal where the case thermal reference is defined as the solder
mounting surface is determined by
of the drain pins. the user’s board
RdeθJsCigins.gTuhaeramntaexeidmbuymdreastiignng
wphreilseeRnqteJdA
here is based on mounting on a 1 in2 pad of 2 oz copper.
www.onsemi.com
VDSS 150 V
rDS(ON) MAX 6.3 mW @ 10 V
ID MAX 169 A
D
G
S MOSFET — N−Channel
H−PSOF8L 11.68x9.80 CASE 100CU
MARKING DIAGRAM
$Y&Z&3&K FDBL 0630N150
$Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Date Code &K = Lot Run Traceability Code FDBL0630N150 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
June, 2019 − Rev. 3
1
Publication Order Number: FDBL0630N150/D
FDBL0630N150
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS IDSS
Drain to Source Breakdown Voltage Drain to Source Leakage Current
ID = 250 mA, VGS = 0 V VDS = 150 V, VGS = 0 V TJ = 25°C
TJ = 175°C (Note 4)
150 − −
− − −
−V 1 mA 1 mA
IGSS Gate to Source Leakage Current ON CHARACTERISTICS
VGS = ±20 V
−
−
±100
nA
VGS(th) rDS(on)
Gate to Source Threshold Voltage Drain to Source On Resistance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA ID = 80 A, VGS = 10 V TJ = 25°C
TJ = 175°C (Note 4)
2.0 − −
2.8 4.0
V
5 6.3 mW
14 17.5 mW
Ciss Input Capacitance
VDS = 75V, VGS = 0V, f = 1 MHz
− 5805 −
pF
Coss Output Capacitan.