FDBL0630N150 N-Channel MOSFET Datasheet

FDBL0630N150 Datasheet, PDF, Equivalent


Part Number

FDBL0630N150

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download FDBL0630N150 Datasheet


FDBL0630N150
FDBL0630N150
MOSFET – N-Channel,
POWERTRENCH)
150 V, 169 A, 6.3 mW
Features
Typ rDS(on) = 5 mW at VGS = 10 V, ID = 80 A
Typ Qg(tot) = 70 nC at VGS = 10 V, ID = 80 A
UIS Capability
This Device is PbFree and is RoHS Compliant
Applications
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch
MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)
Symbol
Parameter
Ratings
Unit
VDSS Drain to Source Voltage
150 V
VGS Gate to Source Voltage
±20 V
ID
EAS
Drain
(Note
Current
1)
Continuous
(VGTSC==1205°VC)
Pulsed Drain Current
TC = 25°C
Single Pulse Avalanche Energy (Note 2)
169
See Figure 4
502
A
mJ
PD Power Dissipation
Derate above 25°C
500 W
3.3 W/°C
TJ, TSTG Operating and Storage Temperature
55 to +175 °C
RqJC Thermal Resistance Junction to Case
0.3 °C/W
RqJA
Maximum Thermal Resistance Junction
to Ambient (Note 3)
43 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by junction temperature.
2. Starting TJ = 25°C, L = 0.24 mH, IAS = 64 A, VDD = 100 V during inductor
charging and VDD = 0 V during time in avalanche.
3.
rReqsJiAstiasntchee
sum of the junctiontocase and casetoambient thermal
where the case thermal reference is defined as the solder
mounting surface
is determined by
of the drain pins.
the user’s board
RdeθJsCigins.gTuhaeramntaexeidmbuymdreastiignng
wphreilseeRnqteJdA
here is based on mounting on a 1 in2 pad of 2 oz copper.
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VDSS
150 V
rDS(ON) MAX
6.3 mW @ 10 V
ID MAX
169 A
D
G
S
MOSFET — NChannel
HPSOF8L 11.68x9.80
CASE 100CU
MARKING DIAGRAM
$Y&Z&3&K
FDBL
0630N150
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Date Code
&K = Lot Run Traceability Code
FDBL0630N150 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
June, 2019 Rev. 3
1
Publication Order Number:
FDBL0630N150/D

FDBL0630N150
FDBL0630N150
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS
IDSS
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
ID = 250 mA, VGS = 0 V
VDS = 150 V, VGS = 0 V TJ = 25°C
TJ = 175°C (Note 4)
150
V
1 mA
1 mA
IGSS Gate to Source Leakage Current
ON CHARACTERISTICS
VGS = ±20 V
±100
nA
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
ID = 80 A, VGS = 10 V TJ = 25°C
TJ = 175°C (Note 4)
2.0
2.8 4.0
V
5 6.3 mW
14 17.5 mW
Ciss Input Capacitance
VDS = 75V, VGS = 0V, f = 1 MHz
5805
pF
Coss Output Capacitance
536
pF
Crss Reverse Transfer Capacitance
16 pF
Rg Gate Resistance
Qg(ToT) Total Gate Charge at 10 V
Qg(th) Threshold Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
SWITCHING CHARACTERISTICS
f = 1 MHz
VGS = 0 to 10 V, VDD = 75 V, ID = 80 A
VGS = 0 to 2 V, VDD = 75 V, ID = 80 A
VDD = 75 V, ID = 80 A
VDD = 75 V, ID = 80 A
2.2
W
70 90 nC
10.5 13 nC
32.5
nC
10 nC
ton TurnOn Time
VDD = 75 V, ID = 80 A, VGS = 10 V, RGEN = 6 W
td(on) TurnOn Delay Time
tr Rise Time
td(off) TurnOff Delay Time
tf Fall Time
toff TurnOff Time
DRAINSOURCE DIODE CHARACTERISTICS
80 ns
39 ns
30 ns
70 ns
23 ns
130 ns
VSD Source to Drain Diode Voltage
ISD = 80 A, VGS = 0 V
− − 1.25 V
ISD = 40 A, VGS = 0 V
− − 1.2 V
Trr Reverse Recovery Time
IF = 80 A, dISD/dt = 100 A/ms, VDD = 120 V
108 125
ns
Qrr Reverse Recovery Charge
323 467
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
www.onsemi.com
2


Features FDBL0630N150 MOSFET – N-Channel, POWE RTRENCH) 150 V, 169 A, 6.3 mW Features • Typ rDS(on) = 5 mW at VGS = 10 V, ID = 80 A • Typ Qg(tot) = 70 nC at VG S = 10 V, ID = 80 A • UIS Capability • This Device is Pb−Free and is RoH S Compliant Applications • Industrial Motor Drive • Industrial Power Suppl y • Industrial Automation • Battery Operated tools • Battery Protection • Solar Inverters • UPS and Energy Inverters • Energy Storage • Load S witch MAXIMUM RATINGS (TJ = 25°C, unl ess otherwise specified) Symbol Param eter Ratings Unit VDSS Drain to Sour ce Voltage 150 V VGS Gate to Source V oltage ±20 V ID EAS Drain (Note Cu rrent 1) − Continuous (VGTSC==1205 °VC) Pulsed Drain Current TC = 25°C Single Pulse Avalanche Energy (Note 2 ) 169 See Figure 4 502 A mJ PD Power Dissipation Derate above 25°C 500 W 3.3 W/°C TJ, TSTG Operating and Stora ge Temperature −55 to +175 °C RqJC Thermal Resistance Junction to Case 0.3 °C/W RqJA Maximum Thermal Resistance Junction to Ambient (No.
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