DatasheetsPDF.com

FDBL0630N150 Dataheets PDF



Part Number FDBL0630N150
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FDBL0630N150 DatasheetFDBL0630N150 Datasheet (PDF)

FDBL0630N150 MOSFET – N-Channel, POWERTRENCH) 150 V, 169 A, 6.3 mW Features • Typ rDS(on) = 5 mW at VGS = 10 V, ID = 80 A • Typ Qg(tot) = 70 nC at VGS = 10 V, ID = 80 A • UIS Capability • This Device is Pb−Free and is RoHS Compliant Applications • Industrial Motor Drive • Industrial Power Supply • Industrial Automation • Battery Operated tools • Battery Protection • Solar Inverters • UPS and Energy Inverters • Energy Storage • Load Switch MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified.

  FDBL0630N150   FDBL0630N150



Document
FDBL0630N150 MOSFET – N-Channel, POWERTRENCH) 150 V, 169 A, 6.3 mW Features • Typ rDS(on) = 5 mW at VGS = 10 V, ID = 80 A • Typ Qg(tot) = 70 nC at VGS = 10 V, ID = 80 A • UIS Capability • This Device is Pb−Free and is RoHS Compliant Applications • Industrial Motor Drive • Industrial Power Supply • Industrial Automation • Battery Operated tools • Battery Protection • Solar Inverters • UPS and Energy Inverters • Energy Storage • Load Switch MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V ID EAS Drain (Note Current 1) − Continuous (VGTSC==1205°VC) Pulsed Drain Current TC = 25°C Single Pulse Avalanche Energy (Note 2) 169 See Figure 4 502 A mJ PD Power Dissipation Derate above 25°C 500 W 3.3 W/°C TJ, TSTG Operating and Storage Temperature −55 to +175 °C RqJC Thermal Resistance Junction to Case 0.3 °C/W RqJA Maximum Thermal Resistance Junction to Ambient (Note 3) 43 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by junction temperature. 2. Starting TJ = 25°C, L = 0.24 mH, IAS = 64 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche. 3. rReqsJiAstiasntchee sum of the junction−to−case and case−to−ambient thermal where the case thermal reference is defined as the solder mounting surface is determined by of the drain pins. the user’s board RdeθJsCigins.gTuhaeramntaexeidmbuymdreastiignng wphreilseeRnqteJdA here is based on mounting on a 1 in2 pad of 2 oz copper. www.onsemi.com VDSS 150 V rDS(ON) MAX 6.3 mW @ 10 V ID MAX 169 A D G S MOSFET — N−Channel H−PSOF8L 11.68x9.80 CASE 100CU MARKING DIAGRAM $Y&Z&3&K FDBL 0630N150 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Date Code &K = Lot Run Traceability Code FDBL0630N150 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2014 June, 2019 − Rev. 3 1 Publication Order Number: FDBL0630N150/D FDBL0630N150 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS IDSS Drain to Source Breakdown Voltage Drain to Source Leakage Current ID = 250 mA, VGS = 0 V VDS = 150 V, VGS = 0 V TJ = 25°C TJ = 175°C (Note 4) 150 − − − − − −V 1 mA 1 mA IGSS Gate to Source Leakage Current ON CHARACTERISTICS VGS = ±20 V − − ±100 nA VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance DYNAMIC CHARACTERISTICS VGS = VDS, ID = 250 mA ID = 80 A, VGS = 10 V TJ = 25°C TJ = 175°C (Note 4) 2.0 − − 2.8 4.0 V 5 6.3 mW 14 17.5 mW Ciss Input Capacitance VDS = 75V, VGS = 0V, f = 1 MHz − 5805 − pF Coss Output Capacitan.


W83697HF FDBL0630N150 STGP20M65DF2


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)