STGW80H65DFB IGBT Datasheet

STGW80H65DFB Datasheet, PDF, Equivalent


Part Number

STGW80H65DFB

Description

IGBT

Manufacture

STMicroelectronics

Total Page 18 Pages
Datasheet
Download STGW80H65DFB Datasheet


STGW80H65DFB
STGW80H65DFB, STGWT80H65DFB
Datasheet
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
3
2
1
TO-247
TAB
TO-3P
3
2
1
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-
stop structure. These devices are part of the new HB series of IGBTs, which
represent an optimum compromise between conduction and switching loss to
maximize the efficiency of any frequency converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGW80H65DFB
STGWT80H65DFB
Product summary
Order code
STGW80H65DFB
Marking
GW80H65DFB
Package
TO-247
Packing
Tube
Order code
STGWT80H65DFB
Marking
GWT80H65DFB
Package
TO-3P
Packing
Tube
DS9536 - Rev 9 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com

STGW80H65DFB
STGW80H65DFB, STGWT80H65DFB
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0)
Continuous collector current at TC = 25 °C
IC
Continuous collector current at TC = 100 °C
ICP (2)
Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C)
Gate-emitter voltage
VGE
Transient gate-emitter voltage
Continuous forward current at TC = 25 °C
IF
Continuous forward current at TC = 100 °C
IFP (2)
Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C)
PTOT
Total power dissipation at TC = 25 °C
TSTG
Storage temperature range
TJ Operating junction temperature range
1. Current level is limited by bond wires
2. Defined by design, not subject to production test.
Symbol
RthJC
RthJC
RthJA
Table 2. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
650
120 (1)
80
300
±20
±30
120 (1)
80
300
470
- 55 to 150
- 55 to 175
Unit
V
A
A
V
V
A
A
W
°C
Value
0.32
0.66
50
Unit
°C/W
DS9536 - Rev 9
page 2/18


Features STGW80H65DFB, STGWT80H65DFB Datasheet Tr ench gate field-stop 650 V, 80 A high s peed HB series IGBT 3 2 1 TO-247 TAB TO-3P 3 2 1 Features • Maximum jun ction temperature: TJ = 175 °C • Hig h speed switching series • Minimized tail current • Low saturation voltage : VCE(sat) = 1.6 V (typ.) @ IC = 80 A Tight parameter distribution • Saf e paralleling • Positive VCE(sat) tem perature coefficient • Low thermal re sistance • Very fast soft recovery an tiparallel diode Applications • Phot ovoltaic inverters • High frequency c onverters Description These devices ar e IGBTs developed using an advanced pro prietary trench gate fieldstop structur e. These devices are part of the new HB series of IGBTs, which represent an op timum compromise between conduction and switching loss to maximize the efficie ncy of any frequency converter. Further more, the slightly positive VCE(sat) te mperature coefficient and very tight pa rameter distribution result in safer paralleling operation. Product status link STGW8.
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