IGBT
STGW80H65DFB, STGWT80H65DFB
Datasheet
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
3 2 1
TO-247
TAB
T...
Description
STGW80H65DFB, STGWT80H65DFB
Datasheet
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
3 2 1
TO-247
TAB
TO-3P
3 2 1
Features
Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Very fast soft recovery antiparallel diode
Applications
Photovoltaic inverters High frequency converters
Description
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product status link STGW80H65DFB STGWT80H65DFB
Product summary
Order code
STGW80H65DFB
Marking
GW80H65DFB
Package
TO-247
Packing
Tube
Order code
STGWT80H65DFB
Marking
GWT80H65DFB
Package
TO-3P
Packing
Tube
DS9536 - Rev 9 - June 2019 For further information contact your local STMicroelectronics sales office.
www.st.com
STGW80H65DFB, STGWT80H65DFB
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0)
Continuous collect...
Similar Datasheet
- STGWT80H65DFB IGBT - STMicroelectronics