FDMS86569-F085 N-Channel MOSFET Datasheet

FDMS86569-F085 Datasheet, PDF, Equivalent


Part Number

FDMS86569-F085

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download FDMS86569-F085 Datasheet


FDMS86569-F085
FDMS86569-F085
N-Channel PowerTrench® MOSFET
60 V, 65 A, 5.6 mΩ
Features
„ Typical RDS(on) = 4.3 mΩ at VGS = 10V, ID = 65 A
„ Typical Qg(tot) = 36 nC at VGS = 10V, ID = 65 A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ PowerTrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter/Alternator
„ Distributed Power Architectures and VRM
„ Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
EAS
PD
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate Above 25oC
TC = 25°C
TC = 25°C
(Note 2)
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
(Note 3)
Ratings
60
±20
65
See Figure 4
41
100
0.67
-55 to + 175
1.5
50
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 30uH, IAS = 52A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDMS86569
Device
FDMS86569-F085
Package
Power56
Reel Size
13”
Tape Width
12mm
Quantity
3000units
©2016 Semiconductor Components Industries, LLC.
August-2017, Rev. 2
1
Publication Order Number:
FDMS86569-F085/D

FDMS86569-F085
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=60V, TJ = 25oC
VGS = 0V TJ = 175oC (Note 4)
VGS = ±20V
60
-
-
-
- -V
- 1 μA
- 1 mA
- ±100 nA
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 65A, TJ = 25oC
VGS= 10V TJ = 175oC (Note 4)
2.0
-
-
2.8 4.0
V
4.3 5.6 mΩ
8.3 10.8 mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
Switching Characteristics
VDS = 30V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 30V
ID = 65A
- 2560
-
- 740
-
- 40
-
- 2.0
-
- 36 54
- 4.8 -
- 14 -
-7 -
pF
pF
pF
Ω
nC
nC
nC
nC
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 30V, ID = 65A,
VGS = 10V, RGEN = 6Ω
- - 36 ns
- 16 - ns
- 11 - ns
- 23 - ns
- 8 - ns
- - 41 ns
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
ISD =65A, VGS = 0V
ISD = 32.5A, VGS = 0V
IF = 65A, dISD/dt = 100A/μs
VDD = 48V
--
--
- 55
- 45
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
1.25
1.2
72
59
V
V
ns
nC
www.onsemi.com
2


Features FDMS86569-F085 N-Channel PowerTrench® M OSFET FDMS86569-F085 N-Channel PowerTr ench® MOSFET 60 V, 65 A, 5.6 mΩ Feat ures „ Typical RDS(on) = 4.3 mΩ at VG S = 10V, ID = 65 A „ Typical Qg(tot) = 36 nC at VGS = 10V, ID = 65 A „ UIS C apability „ RoHS Compliant „ Qualifie d to AEC Q101 Applications „ Automot ive Engine Control „ PowerTrain Manag ement „ Solenoid and Motor Drivers Electronic Steering „ Integrated St arter/Alternator „ Distributed Power Architectures and VRM „ Primary Switc h for 12V Systems MOSFET Maximum Ratin gs TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID EAS PD Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS =10) (Note 1) Pulsed Drain Current Sing le Pulse Avalanche Energy Power Dissipa tion Derate Above 25oC TC = 25°C TC = 25°C (Note 2) TJ, TSTG RθJC RθJA Operating and Storage Temperature Therm al Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient (Note 3) Ratings 60 ±20 65 See Figure 4 4.
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