FDMS4D0N12C Power MOSFET Datasheet

FDMS4D0N12C Datasheet, PDF, Equivalent


Part Number

FDMS4D0N12C

Description

Power MOSFET

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download FDMS4D0N12C Datasheet


FDMS4D0N12C
FDMS4D0N12C
Power MOSFET
120 V, 4.0 mW, 118 A, Single NChannel,
PQFN56
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These are Pbfree, Halogen Free / BFR Free and are RoHS
Compliant
Typical Applications
Synchronous Rectification
ACDC and DCDC Power Supplies
ACDC Adapters (USB PD) SR
Load Switch
MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)
Parameter
Symbol Value
Unit
DraintoSource Voltage
VDSS 120 V
GatetoSource Voltage
VGS ±20 V
Continuous Drain
C(Nuortreen7t)RθJC
Steady
State
TC = 25°C
ID
114 A
Power Dissipation
RθJC (Note 2)
Continuous Drain
C(Nuortreen6t,R7θ)JA
Steady
State
TA = 25°C
PD
ID
106 W
18.5 A
Power Dissipation
RθJA (Note 6, 7)
Pulsed Drain
Current
TA = 25°C, tp = 10 μs
PD
IDM
2.7 W
628 A
Operating Junction and Storage
Temperature
TJ, Tstg
55 to
+150
°C
Source Current (Body Diode)
IS 114 A
Single Pulse DraintoSource Avalanche
Energy (IAV = 66.7 A, L = 0.1 mH)
EAS 222 mJ
Lead Temperature Soldering Reflow for
Soldering Purposes
(1/8” from case for 10 s)
TL 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
V(BR)DDS
120 V
ID MAX
67 A
33 A
RDS(on) MAX
4.0 mΩ @ 10 V
8.0 mΩ @ 6 V
ELECTRICAL CONNECTION
N-Channel MOSFET
Power 56
(PQFN8 5x6)
CASE 483AF
MARKING DIAGRAM
$Y&Z&3&K
FDMS
4D0N12C
$Y
&Z
&3
&K
FDMS4D0N12C
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
March, 2019 Rev. 1
1
Publication Order Number:
FDMS4D0N12C/D

FDMS4D0N12C
FDMS4D0N12C
ORDERING INFORMATION
Device
Package
Shipping
FDMS4D0N12C
PQFN8 (Power 56)
(PbFree)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
THERMAL RESISTANCE RATINGS
Parameter
Junction*to*Case – Steady State (Note 7)
Junction*to*Ambient – Steady State (Note 7)
Symbol
RqJC
RqJA
Max Unit
1.18 °C/W
45
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
OFF CHARACTERISTICS
Drain*to*Source Breakdown Voltage V(BR)DSS
Drain*to*Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/ TJ
VGS = 0 V, ID = 250 mA
ID = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
Gate*to*Source Leakage Current
ON CHARACTERISTICS (Note 8)
IDSS
IGSS
VGS = 0 V,
VDS = 96 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ± 20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH) /TJ
VGS = VDS, ID = 370 mA
ID = 370 mA, ref to 25°C
Drain*to*Source On Resistance
Forward Transconductance
GateResistance
CHARGES & CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
GatetoSource Charge
GatetoDrain Charge
Plateau Voltage
Output Charge
RDS(on)
gFS
RG
VGS = 10 V, ID = 67 A
VGS = 6 V, ID = 33 A
VDS = 5 V, ID = 67 A
TA = 25°C
CISS
COSS
CRSS
QG(TOT)
QG(TOT)
QGS
QGD
VGP
QOSS
VGS = 0 V, f = 1 MHz,
VDS = 60 V
VGS = 6 V, VDS = 60 V,
ID = 67 A
VGS = 10 V, VDS = 60 V,
ID = 67 A
VDD = 60 V, VGS = 0 V
Min
120
2.0
Typ
49
8.5
3.3
4.7
144
0.9
4565
2045
17
36
58
21
9
5
207
Max Unit
1
100
±100
V
mV/°C
mA
mA
nA
4.0 V
mV/°C
4.0 mΩ
8.0
S
1.8 Ω
6460
3060
24
51
82
pF
nC
V
nC
www.onsemi.com
2


Features FDMS4D0N12C Power MOSFET 120 V, 4.0 mW, 118 A, Single N−Channel, PQFN56 Fea tures • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minim ize Conduction Losses • Low QG and Ca pacitance to Minimize Driver Losses • These are Pb−free, Halogen Free / BF R Free and are RoHS Compliant Typical A pplications • Synchronous Rectificati on • AC−DC and DC−DC Power Suppli es • AC−DC Adapters (USB PD) SR • Load Switch MAXIMUM RATINGS (TA = 25 C, Unless otherwise specified) Parame ter Symbol Value Unit Drain−to−S ource Voltage VDSS 120 V Gate−to− Source Voltage VGS ±20 V Continuous Drain C(Nuortreen7t)RθJC Steady State TC = 25°C ID 114 A Power Dissipat ion RθJC (Note 2) Continuous Drain C(N uortreen6t,R7θ)JA Steady State TA = 25°C PD ID 106 W 18.5 A Power Dissi pation RθJA (Note 6, 7) Pulsed Drain C urrent TA = 25°C, tp = 10 μs PD IDM 2.7 W 628 A Operating Junction and S torage Temperature TJ, Tstg −55 to +150 °C Source Current (Body Diode) IS 114 A Single Pulse Drain−to.
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