NVMFS5C682NL N-Channel MOSFET Datasheet

NVMFS5C682NL Datasheet, PDF, Equivalent


Part Number

NVMFS5C682NL

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download NVMFS5C682NL Datasheet


NVMFS5C682NL
NVMFS5C682NL
MOSFET – Power, Single
N-Channel
60 V, 21 mW, 25 A
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C682NLWF Wettable Flank Option for Enhanced Optical
Inspection
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreesnt1R, 3qJ)C
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
C(Nuortreesnt1R, 2qJ,A3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
±20
25
18
28
14
8.8
6.2
3.5
1.7
130
55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 31 A
Single Pulse DraintoSource Avalanche
Energy (IL(pk) = 1.1 A)
EAS 43 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State
RqJC
5.3 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
43
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
60 V
RDS(ON) MAX
21 mW @ 10 V
31.5 mW @ 4.5 V
ID MAX
25 A
D (5)
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
DFN5
(SO8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
XXXXXX = 5C682L
XXXXXX = (NVMFS5C682NL) or
XXXXXX = 682LWF
XXXXXX = (NVMFS5C682NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
July, 2019 Rev. 3
1
Publication Order Number:
NVMFS5C682NL/D

NVMFS5C682NL
NVMFS5C682NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
60
VVDGSS == 600VV,
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
28 mV/°C
10
250 mA
100 nA
Gate Threshold Voltage
Threshold Temperature Coefficient
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
VGS(TH)/TJ
RDS(on)
gFS
VGS = VDS, ID = 16 mA
VGS = 10 V
ID = 10 A
VGS = 4.5 V
ID = 10 A
VDS =15 V, ID = 10 A
1.2 2.0 V
4.5 mV/°C
18 21
26 31.5 mW
17 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 5)
CISS
COSS
CRSS
QG(TOT)
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 48 V; ID = 10 A
VGS = 10 V, VDS = 48 V; ID = 10 A
VGS = 10 V, VDS = 48 V; ID = 10 A
410
210
7.0
2.5
5.0
0.6
1.0
0.5
2.7
pF
nC
nC
nC
V
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 48 V,
ID = 10 A, RG = 2.5 W
4.0
12
12 ns
1.5
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 125°C
0.9 1.2
0.8
V
Reverse Recovery Time
tRR
18
Charge Time
Discharge Time
ta
tb
VGS
=
0
VI,Sd=IS/1d0t
=
A
100
A/ms,
9.0 ns
9.0
Reverse Recovery Charge
QRR
7.0 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2


Features NVMFS5C682NL MOSFET – Power, Single N -Channel 60 V, 21 mW, 25 A Features Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Cond uction Losses • Low QG and Capacitanc e to Minimize Driver Losses • NVMFS5C 682NLWF − Wettable Flank Option for E nhanced Optical Inspection • AEC−Q1 01 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Com pliant MAXIMUM RATINGS (TJ = 25°C unl ess otherwise noted) Parameter Symbol Value Unit Drain−to−Source Volta ge Gate−to−Source Voltage Continu ous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain C(Nuortreesn t1R, 2qJ,A3) Power Dissipation RqJA (No tes 1 & 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulse d Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Tempera ture VDSS VGS ID PD ID PD IDM TJ, Tstg 60 ±20 25 18 28 14 8.8 6.2 3.5 1.7 130 −55 to + 175 V V A W A W A °C Source Current (Body Diode) .
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