AOTF7S65

AOT7S65L/AOB7S65L/AOTF7S65L/AOTF7S65 650V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 750V 30A 0.65Ω 9.2nC 2µJ TO-220 D TO-220F Top View TO-263 D2PAK D D AOT7S65 S D G AOTF7S65(L) S GD G AOB7S65 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT7S65L/AOB7S65L Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G ID IDM IAR EAR EAS 7 5 TC=25°C Power Dissipation B Derate above 25oC PD 104 0.8 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT7S65L/AOB7S65L 65 0.5 Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature....