7A N-Channel MOSFET
AOT7N70/AOTF7N70
700V, 7A N-Channel MOSFET
General Description
Product Summary
The AOT7N70 & AOTF7N70 have been fabri...
Description
AOT7N70/AOTF7N70
700V, 7A N-Channel MOSFET
General Description
Product Summary
The AOT7N70 & AOTF7N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOT7N70L & AOTF7N70L
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
800V@150℃ 7A < 1.8Ω
D
S D G
S GD
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT7N70
AOTF7N70
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
ID
IDM IAR EAR EAS
dv/dt
7 7* 4.2 4.2*
24 5 187 375 50 5
TC=25°C Power Dissipation B Derate above 25oC
PD
198 1.6
38.5 0.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds Thermal Characteristics
TL
300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
AOT7N70 65 0.5
AOTF7N70 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maxim...
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