AO4618 Complementary MOSFET Datasheet

AO4618 Datasheet, PDF, Equivalent


Part Number

AO4618

Description

40V Complementary MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 9 Pages
Datasheet
Download AO4618 Datasheet


AO4618
AO4618
40V Complementary MOSFET
General Description
Product Summary
The AO4618 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This
complementary N and P channel MOSFET configuration
is ideal for low Input Voltage inverter applications.
N-Channel
VDS= 40V
ID= 8A (VGS=10V)
RDS(ON)
< 19m(VGS=10V)
< 27m(VGS=4.5V)
100% UIS Tested
100% Rg Tested
P-Channel
-40V
-7A (VGS=-10V)
RDS(ON)
< 23m(VGS=-10V)
< 30m(VGS=-4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
D2 D1
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1 G2
5 D1
G1
S2 S1
Pin1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
VDS 40
-40
Gate-Source Voltage
VGS ±20
±20
Continuous Drain TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
8
ID 6
IDM 40
IAS 15
EAS 11
-7
-5.5
-35
-35
61
TA=25°C
Power Dissipation B TA=70°C
22
PD 1.3 1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
Units
62.5
°C/W
90 °C/W
40 °C/W
Rev.1. 0: August 2013
www.aosmd.com
Page 1 of 9

AO4618
AO4618
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=40V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, ID=8A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
40
1.4
1.9
15.4
22.5
21
33
0.75
1
5
±100
2.4
19
29
27
1
2.5
V
µA
nA
V
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
415 pF
112 pF
11 pF
1 2.2 3.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.5 12 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=8A
3 6 nC
1.2 nC
Qgd Gate Drain Charge
1.1 nC
tD(on)
Turn-On DelayTime
4 ns
tr Turn-On Rise Time
VGS=10V, VDS=20V, RL=2.5, 3 ns
tD(off)
Turn-Off DelayTime
RGEN=3
15 ns
tf Turn-Off Fall Time
2 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs
12.5
ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
3.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1. 0: August 2013
www.aosmd.com
Page 2 of 9


Features AO4618 40V Complementary MOSFET General Description Product Summary The AO46 18 uses advanced trench technology to p rovide excellent RDS(ON) and low gate c harge. This complementary N and P chann el MOSFET configuration is ideal for lo w Input Voltage inverter applications. N-Channel VDS= 40V ID= 8A (VGS=10V) RD S(ON) < 19mΩ (VGS=10V) < 27mΩ (VGS= 4.5V) 100% UIS Tested 100% Rg Tested P-Channel -40V -7A (VGS=-10V) RDS(ON) < 23mΩ (VGS=-10V) < 30mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested Top Vi ew SOIC-8 Bottom View Top View D2 D1 S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 G 2 5 D1 G1 S2 S1 Pin1 n-channel p-c hannel Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter S ymbol Max n-channel Max p-channel Drai n-Source Voltage VDS 40 -40 Gate-Sou rce Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pul sed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C 8 ID 6 I DM 40 IAS 15 EAS 11 -7 -5.5 -35 -35 61 TA=25°C Power Dissipation B TA=70°C.
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