AO7801 P-Channel MOSFET Datasheet

AO7801 Datasheet, PDF, Equivalent


Part Number

AO7801

Description

Dual P-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 5 Pages
Datasheet
Download AO7801 Datasheet


AO7801
AO7801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7801 uses advanced trench technology to provide
excellent RDS(ON), low gate charge, and operation with gate
voltages as low as 1.8V, in the small SOT363 footprint. It
can be used for a wide variety of applications, including load
switching, low current inverters and low current DC-DC
converters. It is ESD protected to 2KV HBM.
Features
VDS (V) = -20V
ID = -0.6A (VGS = -4.5V)
RDS(ON) < 520m(VGS = -4.5V)
RDS(ON) < 700m(VGS = -2.5V)
RDS(ON) < 950m(VGS = -1.8V)
SC70-6L
(SOT-363)
Top View
Bottom View
Pin1
S1 1 6
G1 2 5
D2 3 4
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
Pulsed Drain Current B
TA=25°C
TA=70°C
ID
IDM
Power Dissipation A
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
D1
G2 G1
S2
D1
S1
Maximum
-20
±8
-0.6
-0.48
-3
0.3
0.19
-55 to 150
Typ Max
360 415
400 460
300 350
D2
G2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: April 2015
www.aosmd.com
Page 1 of 5

AO7801
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-16V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-0.6A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-0.5A
VGS=-1.8V, ID=-0.4A
Forward Transconductance
VDS=-5V, ID=-0.6A
Diode Forward Voltage
IS=-0.5A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-0.6A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V,
RL=16.7, RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-0.6A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs
Min
-20
-0.5
-3
Typ
-0.6
400
542
540
700
1.7
-0.86
114
17
14
12
1.44
0.14
0.35
6.5
6.5
18.2
5.5
10
3
Max Units
V
-1
µA
-5
±10 µA
-0.9 V
A
520
700 m
700 m
950 m
S
-1 V
-0.4 A
140 pF
pF
pF
17
1.8 nC
nC
nC
ns
ns
ns
ns
13 ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: April 2015
www.aosmd.com
Page 2 of 5


Features AO7801 Dual P-Channel Enhancement Mode F ield Effect Transistor General Descrip tion The AO7801 uses advanced trench te chnology to provide excellent RDS(ON), low gate charge, and operation with gat e voltages as low as 1.8V, in the small SOT363 footprint. It can be used for a wide variety of applications, includin g load switching, low current inverters and low current DC-DC converters. It i s ESD protected to 2KV HBM. Features V DS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 520mΩ (VGS = -4.5V) RDS(ON) < 700mΩ (VGS = -2.5V) RDS(ON) < 950m Ω (VGS = -1.8V) SC70-6L (SOT-363) T op View Bottom View Pin1 S1 1 6 G1 2 5 D2 3 4 Pin1 Absolute Maximum Rating s TA=25°C unless otherwise noted Para meter Symbol Drain-Source Voltage VD S Gate-Source Voltage VGS Continuous Drain Current A Pulsed Drain Current B TA=25°C TA=70°C ID IDM Power Diss ipation A TA=25°C TA=70°C PD Junct ion and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maxi.
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