AON6812 N-Channel MOSFET Datasheet

AON6812 Datasheet, PDF, Equivalent


Part Number

AON6812

Description

30V Common Drain N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AON6812 Datasheet


AON6812
AON6812
AlphaMOS 30V Common Drain N-Channel
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
• Common Drain
Application
• Battery Management
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested
100% Rg Tested
30V
28A
< 4m
< 6m
HBM Class 3A
Top View
DFN5X6B
Bottom View
G2
S2
S2
S2
D1/D2
PIN1
G1
S1
S1
S1
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
D1
G1 G2
S1
Maximum
30
±20
28
22
112
27
21
40
40
36
31
12.5
4.1
2.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
53
3
Max
30
64
4
D2
S2
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.2.0: January 2016
www.aosmd.com
Page 1 of 6

AON6812
AON6812
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=125°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±16V
±10 µA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.4 1.8 2.2
V
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
3.3 4
m
4.5 5.4
VGS=4.5V, ID=20A
4.8 6 m
gFS Forward Transconductance
VDS=5V, ID=20A
83 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
0.7 1
28
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1720
746
61
2.6 5.2
7.8
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
24 34
11 20
5.9
3.2
5.8
3.5
57.5
70
20
30
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: January 2016
www.aosmd.com
Page 2 of 6


Features AON6812 AlphaMOS 30V Common Drain N-Chan nel General Description • Latest Tre nch Power AlphaMOS (αMOS LV) technolog y • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Com mon Drain Application • Battery Manag ement Product Summary VDS ID (at VGS=1 0V) RDS(ON) (at VGS=10V) RDS(ON) (at VG S=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 28A < 4mΩ < 6mΩ HBM Class 3A Top View DFN5X6 B Bottom View G2 S2 S2 S2 D1/D2 PIN1 G1 S1 S1 S1 PIN1 Absolute Maximum Rat ings TA=25°C unless otherwise noted P arameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continu ous Drain TC=25°C Current G TC=100° C Pulsed Drain Current C ID IDM Cont inuous Drain TA=25°C Current TA=70° C Avalanche Current C Avalanche energ y L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipati on B TC=100°C PD TA=25°C Power Diss ipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG D1 G1 G2 S1 Max.
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