30V Common Drain N-Channel MOSFET
AON6812
AlphaMOS 30V Common Drain N-Channel
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • V...
Description
AON6812
AlphaMOS 30V Common Drain N-Channel
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(ON) at 4.5V VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Common Drain
Application
Battery Management
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested 100% Rg Tested
30V 28A < 4mΩ < 6mΩ
HBM Class 3A
Top View
DFN5X6B
Bottom View
G2 S2 S2 S2
D1/D2
PIN1
G1 S1 S1 S1
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS EAS
VDS Spike
100ns
VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
D1
G1 G2
S1
Maximum 30 ±20 28 22 112 27 21 40 40 36 31 12.5 4.1 2.6
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 24 53 3
Max 30 64 4
D2
S2
Units V V A
A A mJ V W W °C
Units °C/W °C/W °C/W
Rev.2.0: January 2016
www.aosmd.com
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AON6812
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC P...
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