AOT20N25 N-Channel MOSFET Datasheet

AOT20N25 Datasheet, PDF, Equivalent


Part Number

AOT20N25

Description

20A N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 5 Pages
Datasheet
Download AOT20N25 Datasheet


AOT20N25
AOT20N25
250V,20A N-Channel MOSFET
General Description
Product Summary
The AOT20N25 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT20N25L
Top View
TO-220
300V@150
20A
< 0.17
D
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
VGS
ID
IDM
IAS
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol
RθJA
RθCS
RθJC
G
AOT20N25
250
±30
20
14
51
4.5
608
5
208
1.7
-55 to 150
300
AOT20N25
65
0.5
0.6
S
Units
V
V
A
A
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Oct 2011
www.aosmd.com
Page 1 of 5

AOT20N25
AOT20N25
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS
IGSS
VGS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=250V, VGS=0V
VDS=200V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=10A
VDS=40V, ID=10A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=200V, ID=20A
VGS=10V, VDS=125V, ID=20A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V
250
300
V
0.25
V/ oC
1
µA
10
±100 nΑ
3.2 3.8 4.5
V
0.14 0.17
16 S
0.72 1
V
20 A
51 A
1028
167
11
1.9 3.9 5.9
pF
pF
pF
20 25
5.7
8
27
31
70
25
179
1.6
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.5A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Oct 2011
www.aosmd.com
Page 2 of 5


Features AOT20N25 250V,20A N-Channel MOSFET Gene ral Description Product Summary The A OT20N25 is fabricated using an advanced high voltage MOSFET process that is de signed to deliver high levels of perfor mance and robustness in popular AC-DC a pplications.By providing low RDS(on), C iss and Crss along with guaranteed aval anche capability this device can be ado pted quickly into new and existing offl ine power supply designs.This device is ideal for boost converters and synchro nous rectifiers for consumer, telecom, industrial power supplies and LED backl ighting. VDS ID (at VGS=10V) RDS(ON) ( at VGS=10V) 100% UIS Tested 100% Rg Tes ted For Halogen Free add "L" suffix to part number: AOT20N25L Top View TO-220 300V@150℃ 20A < 0.17Ω D S D G A bsolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Dr ain-Source Voltage VDS Gate-Source Vo ltage Continuous Drain TC=25°C Curr ent TC=100°C Pulsed Drain Current C Avalanche Current C Single pulsed avalanche energy G Peak diode rec.
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