20A N-Channel MOSFET
AOT20N25
250V,20A N-Channel MOSFET
General Description
Product Summary
The AOT20N25 is fabricated using an advanced h...
Description
AOT20N25
250V,20A N-Channel MOSFET
General Description
Product Summary
The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
For Halogen Free add "L" suffix to part number: AOT20N25L
Top View TO-220
300V@150℃ 20A < 0.17Ω
D
S D G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
VGS
ID
IDM IAS EAS dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol RθJA RθCS RθJC
G
AOT20N25 250 ±30 20 14 51 4.5 608 5 208 1.7
-55 to 150
300
AOT20N25 65 0.5 0.6
S
Units V V
A
A mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
...
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