AOTF8N80 N-Channel MOSFET Datasheet

AOTF8N80 Datasheet, PDF, Equivalent


Part Number

AOTF8N80

Description

7.4A N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AOTF8N80 Datasheet


AOTF8N80
AOT8N80L/AOTF8N80
800V, 7.4A N-Channel MOSFET
General Description
Product Summary
The AOT8N80L & AOTF8N80 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
900V@150
7.4A
< 1.63
TO-220
D
Top View
TO-220F
D
AOT8N80L
S
D
G
AOTF8N80
S
GD
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT8N80L
800
±30
7.4
4.6
26
3.8
217
433
5
245
2.0
-55 to 150
AOTF8N80
7.4*
4.6*
50
0.4
300
AOT8N80L
65
0.5
0.51
AOTF8N80
65
--
2.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1.0: Sepetember 2017
www.aosmd.com
Page 1 of 6

AOTF8N80
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
800
900
0.86
V
V/ oC
IDSS Zero Gate Voltage Drain Current
VDS=800V, VGS=0V
VDS=640V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=4A
VDS=40V, ID=4A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=640V, ID=8A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=8A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
1
10 µA
±100 nΑ
3.3 3.9 4.5
V
1.35 1.63
9S
0.72 1
V
7.4 A
26 A
1100
70
6
1.7
1375
101
11
3.5
1650
132
16
5.3
pF
pF
pF
20 26 32
7.3
9.1
35
51
69
41
380 484 585
4.5 6 7.5
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25, Starting TJ=25°C
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1.0: Sepetember 2017
www.aosmd.com
Page 2 of 6


Features AOT8N80L/AOTF8N80 800V, 7.4A N-Channel M OSFET General Description Product Sum mary The AOT8N80L & AOTF8N80 have been fabricated using an advanced high volt age MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC application s.By providing low RDS(on), Ciss and Cr ss along with guaranteed avalanche capa bility these parts can be adopted quick ly into new and existing offline power supply designs. VDS ID (at VGS=10V) RD S(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 900V@150℃ 7.4A < 1.63Ω TO-220 D Top View TO-220F D AOT8N8 0L S D G AOTF8N80 S GD G Absolute Maximum Ratings TA=25°C unless otherwi se noted Parameter Symbol Drain-Sour ce Voltage VDS Gate-Source Voltage V GS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Av alanche Current C Repetitive avalanche energy C Single pulsed avalanche ener gy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD .
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