AOT11N70 N-Channel MOSFET Datasheet

AOT11N70 Datasheet, PDF, Equivalent


Part Number

AOT11N70

Description

11A N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AOT11N70 Datasheet


AOT11N70
AOT11N70/AOTF11N70
700V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11N70 & AOTF11N70 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT11N70L & AOTF11N70L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
800V@150
11A
< 0.87
D
S
GD
S
GD
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT11N70
AOTF11N70
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
11 11*
7.2 7.2*
43
4
120
240
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
271 50.0
2.1 0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT11N70
65
0.5
AOTF11N70
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.46
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: March 2010
www.aosmd.com
Page 1 of 6

AOT11N70
AOT11N70/AOTF11N70
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=700V, VGS=0V
VDS=560V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=5.5A
VDS=40V, ID=5.5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=560V, ID=11A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=350V, ID=11A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
700
800
V
0.8 V/ oC
1
µA
10
±100 nΑ
3 3.8 4.5 V
0.72 0.87
17 S
0.72 1
V
11 A
43 A
1430
116
8.4
1.8
1793
146
10.5
3.6
2150
190
15
5.4
pF
pF
pF
30 37.5 45
7.8 10 12
12 15 22
42
74
103
62
320 400 480
7.2 9 11
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=4A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: March 2010
www.aosmd.com
Page 2 of 6


Features AOT11N70/AOTF11N70 700V,11A N-Channel MO SFET General Description Product Summ ary The AOT11N70 & AOTF11N70 have been fabricated using an advanced high volt age MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC application s. By providing low RDS(on), Ciss and C rss along with guaranteed avalanche cap ability these parts can be adopted quic kly into new and existing offline power supply designs. For Halogen Free add " L" suffix to part number: AOT11N70L & A OTF11N70L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Te sted TO-220 Top View TO-220F 800V@1 50℃ 11A < 0.87Ω D S GD S GD G S Absolute Maximum Ratings TA=25°C unle ss otherwise noted Parameter Symbol AOT11N70 AOTF11N70 Drain-Source Volta ge VDS 700 Gate-Source Voltage VGS 30 Continuous Drain TC=25°C Curren t TC=100°C Pulsed Drain Current C A valanche Current C Repetitive avalanch e energy C Single plused avalanche energy G Peak diode recovery dv/dt.
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