AOI1N60 N-Channel MOSFET Datasheet

AOI1N60 Datasheet, PDF, Equivalent


Part Number

AOI1N60

Description

1.3A N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AOI1N60 Datasheet


AOI1N60
AOD1N60/AOU1N60/AOI1N60
600V,1.3A N-Channel MOSFET
General Description
Product Summary
The AOD1N60 & AOU1N60 & AOI1N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
700V@150
1.3A
< 9
TO252
DPAK
Top View
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
TO251
Top View
Bottom View
D
S
G
AOD1N60
G
S
S
D
G
AOI1N60
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
DS
G
AOU1N60
Maximum
600
±30
1.3
0.8
4
1
15
30
5
45
0.36
-50 to 150
300
G
S DG
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
2.3
Maximum
55
0.5
2.8
Units
°C/W
°C/W
°C/W
Rev 5: Aug 2011
www.aosmd.com
Page 1 of 6

AOI1N60
AOD1N60/AOU1N60/AOI1N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=0.65A
gFS Forward Transconductance
VDS=40V, ID=0.65A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600
700
V
0.6 V/ oC
1
µA
10
100 nΑ
3 4.1 4.5 V
7.5 9
0.9 S
0.65 1
V
1A
4A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
105 130 160
12 14.5 18
1.5 1.8 2.2
2.9 3.5 5.3
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=1A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=1A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=1.3A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=1.3A,dI/dt=100A/µs,VDS=100V
6.1 8
1.3 2
3.1 4
10 13
6.7 13
20 26
11.5 23
114 137
0.63 0.76
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1A, VDD=150V, RG=10, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Aug 2011
www.aosmd.com
Page 2 of 6


Features AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Chan nel MOSFET General Description Produc t Summary The AOD1N60 & AOU1N60 & AOI1 N60 have been fabricated using an advan ced high voltage MOSFET process that is designed to deliver high levels of per formance and robustness in popular AC-D C applications. By providing low RDS(on ), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID ( at VGS=10V) RDS(ON) (at VGS=10V) 100% U IS Tested! 100% Rg Tested! 700V@150℃ 1.3A < 9Ω TO252 DPAK Top View Bot tom View D D Top View TO251A IPAK Bo ttom View TO251 Top View Bottom View D S G AOD1N60 G S S D G AOI1N60 G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Sym bol Drain-Source Voltage VDS Gate-So urce Voltage VGS Continuous Drain TC= 25°C CurrentB TC=100°C Pulsed Drai n Current C Avalanche Current C Repet itive avalanche energy C Single pulsed avalanche energy H Peak diode.
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