AOD4S60 Power Transistor Datasheet

AOD4S60 Datasheet, PDF, Equivalent


Part Number

AOD4S60

Description

600V 4A MOS Power Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 7 Pages
Datasheet
Download AOD4S60 Datasheet


AOD4S60
AOD4S60/AOI4S60/AOU4S60
600V 4A α MOS TM Power Transistor
General Description
Product Summary
The AOD4S60 & AOI4S60 & AOU4S60 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
16A
0.9
6nC
1.5µJ
TO252
DPAK
Top View
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
TO251
Top View
Bottom View
D
S
G
AOD4S60
G
S
S
D
G
AOI4S60
G
D
S
S
GD
AOU4S60
G
S DG
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds K
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Maximum
600
±30
4
3
16
1.6
38
77
56.8
0.45
100
20
-55 to 150
300
Typical
45
--
1.8
Maximum
55
0.5
2.2
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev3: Jan 2012
www.aosmd.com
Page 1 of 7

AOD4S60
AOD4S60/AOI4S60/AOU4S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=150°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=2A, TJ=25°C
VGS=10V, ID=2A, TJ=150°C
VSD Diode Forward Voltage
IS=2A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Co(er)
Co(tr)
Effective output capacitance, energy
related I
Effective output capacitance, time
related J
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=2A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=2A,
RG=25
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=2A,dI/dt=100A/µs,VDS=400V
Peak Reverse Recovery Current
IF=2A,dI/dt=100A/µs,VDS=400V
Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=400V
Min Typ Max Units
600 -
-
650 700
-
V
- -1
µA
- 10 -
- - ±100 nΑ
2.9 3.5 4.1
V
- 0.78 0.9
- 2 2.4
- 0.81 -
V
- - 4A
- - 16 A
- 263 -
- 21 -
- 17.1 -
pF
pF
pF
- 47.7 -
- 0.75 -
- 18 -
pF
pF
- 6 - nC
- 1.6 - nC
- 1.8 - nC
- 18 - ns
- 8 - ns
- 40 - ns
- 12 - ns
- 177 -
- 12 -
ns
A
- 1.5 - µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.6A, VDD=150V, Starting TJ=25°C
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
K. Wave soldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: Jan 2012
www.aosmd.com
Page 2 of 7


Features AOD4S60/AOI4S60/AOU4S60 600V 4A α MOS T M Power Transistor General Description Product Summary The AOD4S60 & AOI4S6 0 & AOU4S60 have been fabricated using the advanced αMOSTM high voltage proce ss that is designed to deliver high lev els of performance and robustness in sw itching applications. By providing low RDS(on), Qg and EOSS along with guarant eed avalanche capability these parts ca n be adopted quickly into new and exist ing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 70 0V 16A 0.9Ω 6nC 1.5µJ TO252 DPAK Top View Bottom View D D Top View T O251A IPAK Bottom View TO251 Top View Bottom View D S G AOD4S60 G S S D G AOI4S60 G D S S GD AOU4S60 G S DG S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symb ol Drain-Source Voltage VDS Gate-Sou rce Voltage VGS Continuous Drain TC= 25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single .
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