AOTF7S60

AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT7S60L & AOB7S60L & AOTF7S60L VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 700V 33A 0.6Ω 8.2nC 1.9µJ D AOT7S60 DS G AOTF7S60 S D G G S G AOB7S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT7S60/AOB7S60 AOTF7S60L Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G ID IDM IAR EAR EAS 7 5 33 1.7 43 86 7* 5* TC=25°C Power Dissipation B Derate above 25oC PD 104 0.8 34 0.3 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA Rθ...