AOTF7S60 Power Transistor Datasheet

AOTF7S60 Datasheet, PDF, Equivalent


Part Number

AOTF7S60

Description

600V 7A MOS Power Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AOTF7S60 Datasheet


AOTF7S60
AOT7S60/AOB7S60/AOTF7S60
600V 7A α MOS TM Power Transistor
General Description
Product Summary
The AOT7S60 & AOB7S60 & AOTF7S60 have been
fabricated using the advanced αMOSTM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT7S60L & AOB7S60L & AOTF7S60L
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220
TO-220F
Top View
TO-263
D2PAK
D
700V
33A
0.6
8.2nC
1.9µJ
D
AOT7S60
DS
G
AOTF7S60
S
D
G
G
S
G
AOB7S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT7S60/AOB7S60
AOTF7S60L
Drain-Source Voltage
VDS
600
Gate-Source Voltage VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
7
5
33
1.7
43
86
7*
5*
TC=25°C
Power Dissipation B Derate above 25oC
PD
104
0.8
34
0.3
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
100
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT7S60/AOB7S60
65
0.5
AOTF7S60L
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.2
5
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev.1.0 October 2013
www.aosmd.com
Page 1 of 6

AOTF7S60
AOT7S60/AOB7S60/AOTF7S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=150°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.5A, TJ=25°C
VGS=10V, ID=3.5A, TJ=150°C
VSD Diode Forward Voltage
IS=3.5A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
600 -
-
650 700
-
V
- -1
µA
- 10 -
- - ±100 nΑ
2.7 3.3 3.9
V
- 0.54 0.60
- 1.48 1.64
- 0.82 1.2 V
- - 7A
- - 33 A
- 372 -
- 28 -
pF
pF
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=3.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=3.5A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3.5A,dI/dt=100A/µs,VDS=400V
Irm
Peak Reverse Recovery Current
IF=3.5A,dI/dt=100A/µs,VDS=400V
Qrr Body Diode Reverse Recovery Charge IF=3.5A,dI/dt=100A/µs,VDS=400V
- 22 -
- 65 -
- 1.2 -
- 17.5 -
- 8.2 -
- 2.0 -
- 2.8 -
- 19 -
- 13 -
- 50 -
- 15 -
- 198 -
- 18 -
- 2.4
-
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 October 2013
www.aosmd.com
Page 2 of 6


Features AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Descriptio n Product Summary The AOT7S60 & AOB7S 60 & AOTF7S60 have been fabricated usin g the advanced αMOSTM high voltage pro cess that is designed to deliver high l evels of performance and robustness in switching applications. By providing lo w RDS(on), Qg and EOSS along with guara nteed avalanche capability these parts can be adopted quickly into new and exi sting offline power supply designs. For Halogen Free add "L" suffix to part nu mber: AOT7S60L & AOB7S60L & AOTF7S60L VDS @ Tj,max IDM RDS(ON),max Qg,typ Eos s @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2P AK D 700V 33A 0.6Ω 8.2nC 1.9µJ D A OT7S60 DS G AOTF7S60 S D G G S G AO B7S60 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Sy mbol AOT7S60/AOB7S60 AOTF7S60L Drain- Source Voltage VDS 600 Gate-Source V oltage VGS ±30 Continuous Drain TC=2 5°C Current TC=100°C Pulsed Drain Current C Avalanche Current C R.
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