AO3160 N-Channel MOSFET Datasheet

AO3160 Datasheet, PDF, Equivalent


Part Number

AO3160

Description

0.04A N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 5 Pages
Datasheet
Download AO3160 Datasheet


AO3160
AO3160
600V,0.04A N-Channel MOSFET
General Description
Product Summary
The AO3160 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels
of performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
700V@150
0.04A
< 500
< 600
SOT23A
Top View
Bottom View
D
D
SG
G
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
CurrentA,F
TA=70°C
Pulsed Drain Current B
Peak diode recovery dv/dt
ID
IDM
dv/dt
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
600
±20
0.04
0.03
0.12
5
1.39
0.89
-50 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
D
S
Units
V
V
A
V/ns
W
°C
Units
°C/W
°C/W
°C/W
Rev1: April 2012
www.aosmd.com
Page 1 of 5

AO3160
AO3160
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=8µA
Static Drain-Source On-Resistance
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=0.016A
VGS=4.5V, ID=0.016A
gFS Forward Transconductance
VDS=40V, ID=0.016A
VSD Diode Forward Voltage
IS=0.016A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=400V, ID=0.01A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=0.01A,
RG=6
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=0.016A,dI/dt=100A/µs,VDS=300V
Body Diode Reverse Recovery Charge IF=0.016A,dI/dt=100A/µs,VDS=300V
Min Typ Max Units
600 -
- 700
-
-
V
- 0.64 - V/ oC
- -1
- - 10
- - ±100
1.4 2 3.2
- 232 500
- 315 600
- 0.024 -
- 0.74 1
- - 0.04
- - 0.12
µA
nΑ
V
S
V
A
A
- 10 15 pF
- 1.8 3 pF
- 0.7 1 pF
5 10 15
- 1 1.5 nC
- 0.1 0.15 nC
- 0.52 0.8 nC
- 4 12 ns
- 5.2 8 ns
- 12.5 19 ns
- 55 82.5 ns
- 105 160 ns
- 9.5 14.3 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: April 2012
www.aosmd.com
Page 2 of 5


Features AO3160 600V,0.04A N-Channel MOSFET Gene ral Description Product Summary The A O3160 is fabricated using an advanced h igh voltage MOSFET process that is desi gned to deliver high levels of performa nce and robustness in popular AC-DC app lications. By providing low RDS(on), Ci ss and Crss along with guaranteed avala nche capability this device can be adop ted quickly into new and existing offli ne power supply designs. VDS ID (at VG S=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 700V@150℃ 0.04A < 500Ω < 600Ω SOT23A Top View Bottom View D D SG G GS Absolute Maximum Rati ngs TA=25°C unless otherwise noted Pa rameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuo us Drain TA=25°C CurrentA,F TA=70°C Pulsed Drain Current B Peak diode re covery dv/dt ID IDM dv/dt TA=25°C Po wer Dissipation A TA=70°C PD Junctio n and Storage Temperature Range TJ, TS TG Maximum 600 ±20 0.04 0.03 0.12 5 1 .39 0.89 -50 to 150 Thermal Characteristics Parameter Maximum Junction-to-.
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