AOK42S60L Power Transistor Datasheet

AOK42S60L Datasheet, PDF, Equivalent


Part Number

AOK42S60L

Description

600V 39A MOS Power Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AOK42S60L Datasheet


AOK42S60L
AOK42S60L
600V 39A α MOS TM Power Transistor
General Description
Product Summary
The AOK42S60L has been fabricated using the
advanced αMOSTM high voltage process that is designed
to deliver high levels of performance and robustness in
switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
700V
166A
0.099
40nC
9.2µJ
D
AOK42S60L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
G
AOK42S60L
600
±30
39
25
166
11
234
1345
417
3.3
100
20
-55 to 150
300
AOK42S60L
40
0.5
0.3
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev1.0: Sepetember 2017
www.aosmd.com
Page 1 of 6

AOK42S60L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=150°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=21A, TJ=25°C
VGS=10V, ID=21A, TJ=150°C
VSD Diode Forward Voltage
IS=21A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Co(er)
Co(tr)
Crss
Rg
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0 to 480V, f=1MHz
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Irm
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=21A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=21A,
RG=25
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=21A,dI/dt=100A/µs,VDS=400V
Peak Reverse Recovery Current
IF=21A,dI/dt=100A/µs,VDS=400V
Body Diode Reverse Recovery Charge IF=21A,dI/dt=100A/µs,VDS=400V
Min Typ Max Units
600 -
-
650 700
-
- -1
- 10 -
- - ±100
2.5 3.2 3.8
- 0.085 0.099
- 0.24 0.28
- 0.84 -
- - 39
- - 166
V
µA
nΑ
V
V
A
A
- 2154 -
- 135 -
- 103 -
pF
pF
pF
- 344 -
- 2.7 -
- 1.7 -
pF
pF
- 40 -
- 11.7 -
- 11.9 -
- 38.5 -
- 53 -
- 136 -
- 46 -
- 473 -
- 38.5 -
- 10.5 -
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6.7A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1.0: Sepetember 2017
www.aosmd.com
Page 2 of 6


Features AOK42S60L 600V 39A α MOS TM Power Trans istor General Description Product Sum mary The AOK42S60L has been fabricated using the advanced αMOSTM high voltag e process that is designed to deliver h igh levels of performance and robustnes s in switching applications. By providi ng low RDS(on), Qg and EOSS along with guaranteed avalanche capability this de vice can be adopted quickly into new an d existing offline power supply designs . VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tes ted 700V 166A 0.099Ω 40nC 9.2µJ D AOK42S60L Absolute Maximum Ratings TA =25°C unless otherwise noted Paramete r Symbol Drain-Source Voltage VDS G ate-Source Voltage VGS Continuous Dra in TC=25°C Current TC=100°C Pulse d Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G ID IDM IAR E AR EAS TC=25°C Power Dissipation B De rate above 25oC PD MOSFET dv/dt rugge dness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperatu.
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