AOK42S60L

AOK42S60L 600V 39A α MOS TM Power Transistor General Description Product Summary The AOK42S60L has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 166A 0.099Ω 40nC 9.2µJ D AOK42S60L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G ID IDM IAR EAR EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA RθCS Maximum Junction-to-Case RθJC G AOK42S60L 600 ±30 39 25 166 11 234 1345 417 3.3 100 20 -55 to 150 300 AOK42S60L 40 0.5 0.3 S Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev1.0: Sepetember 2017 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless o...