AON4407 P-Channel MOSFET Datasheet

AON4407 Datasheet, PDF, Equivalent


Part Number

AON4407

Description

12V P-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 5 Pages
Datasheet
Download AON4407 Datasheet


AON4407
AON4407
12V P-Channel MOSFET
General Description
The AON4407 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch.
Features
VDS (V) = -12V
ID = -9 A
(VGS = -4.5V)
RDS(ON) < 20mΩ (VGS = -4.5V)
RDS(ON) < 25mΩ (VGS = -2.5V)
RDS(ON) < 31mΩ (VGS = -1.8V)
ESD Protected
Top View
DFN 3x2
Bottom View
Pin 1
DD
Rg
DD
D DG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
Power Dissipation B
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-12
±8
-9
-7
-60
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
42
74
25
Max
50
90
30
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

AON4407
AON4407
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=-250µA, VGS=0V
VDS=-12V, VGS=0V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-9A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance VGS=-2.5V, ID=-8.5A
VGS=-1.8V, ID=-7.5A
VGS=-1.5V, ID=-7A
Forward Transconductance
VDS=-5V, ID=-9A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
-12
TJ=55°C
-0.35
-60
TJ=125°C
-0.5
16.5
22
20
24
29
45
-0.53
-1
-5
±10
-0.85
20
26
25
31
38
-1
-2.5
V
µA
µA
V
A
m
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-6V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1740
334
200
1.3
2100
1.7
pF
pF
pF
k
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-6V, ID=-9A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-6V, RL=0.67,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-9A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs
19 23
4.5
5.3
240
580
7
4.2
22 27
17
nC
nC
nC
ns
ns
µs
µs
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 1: June 2009
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


Features AON4407 12V P-Channel MOSFET General De scription The AON4407 uses advanced tre nch technology to provide excellent RDS (ON), low gate charge and operation wit h gate voltages as low as 1.8V. This de vice is suitable for use as a load swit ch. Features VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 25mΩ (VGS = -2.5 V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Protected Top View DFN 3x2 Bottom Vi ew Pin 1 DD Rg DD D DG GS Absolut e Maximum Ratings TA=25°C unless other wise noted Parameter Symbol Drain-So urce Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Curre nt TA=70°C Pulsed Drain Current C I D IDM Power Dissipation B TA=25°C TA =70°C PD Junction and Storage Temper ature Range TJ, TSTG Maximum -12 ±8 -9 -7 -60 2.5 1.6 -55 to 150 Thermal C haracteristics Parameter Maximum Juncti on-to-Ambient A Maximum Junction-to-Amb ient A D Maximum Junction-to-Lead t 10s Steady State Steady State Symbol RθJA RθJL Typ 42 74 25 Max 50 90 30.
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