AON6984

AON6984 30V Dual Asymmetric N-Channel MOSFET General Description Trench Power αMOS Technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 50A < 5.2mΩ < 8.4mΩ Q2 30V 82A < 2.8mΩ < 3.45mΩ Applications DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6D Top View Bottom View Top View Bottom View S2 G2 S2 S2 PHASE (S1/D2) PIN1 D1 D1G1 D1 D1 PIN1 PHASE S1/D2 Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Orderable Part Number AON6984 Package Type DFN 5x6D Form Tape & Reel D1 S1/D2 Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.01mH C IDSM IAS EAS VDS Spike 10µs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 30 ±20 50 31 100 19 15 38 7 36 21 8 3.1 2 -55 to 150 Max Q2 30 ±12 82 54 180 26 21 72 26 36 31 13 3.1 2 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s St...