AON6996 N-Channel MOSFET Datasheet

AON6996 Datasheet, PDF, Equivalent


Part Number

AON6996

Description

30V Dual Asymmetric N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 10 Pages
Datasheet
Download AON6996 Datasheet


AON6996
AON6996
30V Dual Asymmetric N-Channel MOSFET
General Description
• Trench Power αMOS Technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Applications
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
Top View
DFN5X6D Punch
Bottom View
100% UIS Tested
100% Rg Tested
Top View
Q1
30V
50A
< 5.2mΩ
< 8.6mΩ
Q2
30V
60A
< 3.9mΩ
< 5mΩ
Bottom View
PIN1
Orderable Part Number
AON6996
PIN1
Package Type
DFN 5x6D
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.01mH
C
VGS
ID
IDM
IDSM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
30
±20
50
31
100
19
15
38
7
36
21
8.3
3.1
2
-55 to 150
Max Q2
30
±12
60
38
120
23
18
48
12
36
22
8.6
3.1
2
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
30
50
4.6
Typ Q2
30
50
4.4
Max Q1
40
65
6
Max Q2
40
65
5.8
Units
°C/W
°C/W
°C/W
Rev.2.0: June 2015
www.aosmd.com
Page 1 of 10

AON6996
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Min
30
1.4
0.6
Typ
1.8
4.3
6.3
6.8
67
0.71
820
340
40
1.2
13
6.1
2
2.4
6.5
16.5
17
2.5
11
19
Max Units
1
5
±100
2.2
5.2
7.6
8.6
1
20
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
1.8 Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: June 2015
www.aosmd.com
Page 2 of 10


Features AON6996 30V Dual Asymmetric N-Channel MO SFET General Description • Trench Po wer αMOS Technology • Low RDS(ON) Low Gate Charge • High Current Capa bility • RoHS and Halogen-Free Compli ant Product Summary VDS ID (at VGS=10V ) RDS(ON) (at VGS=10V) RDS(ON) (at VGS= 4.5V) Applications • DC/DC Converter s in Computing • Isolated DC/DC Conve rters in Telecom and Industrial Top Vi ew DFN5X6D Punch Bottom View 100% UIS Tested 100% Rg Tested Top View Q1 30V 50A < 5.2mΩ < 8.6mΩ Q2 30V 60A < 3.9mΩ < 5mΩ Bottom View PIN1 Orde rable Part Number AON6996 PIN1 Package Type DFN 5x6D Q2: SRFETTM Soft Recove ry MOSFET: Integrated Schottky Diode Fo rm Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Sym bol Drain-Source Voltage VDS Gate-So urce Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Curr ent C Continuous Drain Current Avalanc he Current C TA=25°C TA=70°C Avalanche energy L=0.01mH C VGS ID IDM IDSM IAS EAS VDS.
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