AON6996

AON6996 30V Dual Asymmetric N-Channel MOSFET General Description Trench Power αMOS Technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial Top View DFN5X6D Punch Bottom View 100% UIS Tested 100% Rg Tested Top View Q1 30V 50A < 5.2mΩ < 8.6mΩ Q2 30V 60A < 3.9mΩ < 5mΩ Bottom View PIN1 Orderable Part Number AON6996 PIN1 Package Type DFN 5x6D Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.01mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 30 ±20 50 31 100 19 15 38 7 36 21 8.3 3.1 2 -55 to 150 Max Q2 30 ±12 60 38 120 23 18 48 12 36 22 8.6 3.1 2 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 30 50 4.6 Typ Q2...