AON6946 N-Channel MOSFET Datasheet

AON6946 Datasheet, PDF, Equivalent


Part Number

AON6946

Description

30V Dual Asymmetric N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 10 Pages
Datasheet
Download AON6946 Datasheet


AON6946
AON6946
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
16A
<11.6m
<17m
Q2
30V
18A
<7.8m
<11.8m
Top View
DFN5X6B
Bottom View
PIN1
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
16
ID 12
IDM 64
14
IDSM
11.5
IAS 19
EAS 9
18
14
72
18G
14
25
16
VDS Spike
100ns
VSPIKE
36
36
TC=25°C
Power Dissipation B TC=100°C
PD
7.3
2.9
13
5.2
TA=25°C
Power Dissipation A TA=70°C
PDSM
3.5
2.3
3.9
2.5
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
55
13.8
Typ Q2
26
50
7.7
Max Q1
35
66
17
Max Q2
32
60
9.5
Units
°C/W
°C/W
°C/W
Rev.1.0: September 2013
www.aosmd.com
Page 1 of 10

AON6946
AON6946
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.2 1.8 2.2
V
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=13A
TJ=125°C
9.6 11.6
m
13.4 16.2
VGS=4.5V, ID=10A
13.6 17 m
gFS Forward Transconductance
VDS=5V, ID=13A
50 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
9A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
485
235
32
0.9 1.8 2.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8 15 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=13A
3.9 8 nC
1.1 nC
Qgd Gate Drain Charge
2.1 nC
tD(on)
Turn-On DelayTime
3.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.2, 2.8 ns
tD(off)
Turn-Off DelayTime
RGEN=3
16.3
ns
tf Turn-Off Fall Time
3 ns
trr Body Diode Reverse Recovery Time IF=13A, dI/dt=500A/µs
9.9 ns
Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs
12.9 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
www.aosmd.com
Page 2 of 10


Features AON6946 30V Dual Asymmetric N-Channel Al phaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) techno logy • Very Low RDS(on) at 4.5V VGS Low Gate Charge • High Current Cap ability • RoHS and Halogen-Free Compl iant Application • DC/DC Converters i n Computing, Servers, and POL • Isola ted DC/DC Converters in Telecom and Ind ustrial Product Summary VDS ID (at VGS =10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Teste d Q1 30V 16A <11.6mΩ <17mΩ Q2 30V 18A <7.8mΩ <11.8mΩ Top View DFN5 X6B Bottom View PIN1 PIN1 Top View Bottom View Absolute Maximum Ratings T A=25°C unless otherwise noted Paramet er Symbol Max Q1 Max Q2 Drain-Sourc e Voltage VDS 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TC=25 °C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.05mH C 16 ID 12 IDM 64 14 IDSM 11.5 IAS 19 EAS 9 18 14 72 18G 14 25 16 VDS Spike 100ns VSPIKE 36 .
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