AONY36352 N-Channel MOSFET Datasheet

AONY36352 Datasheet, PDF, Equivalent


Part Number

AONY36352

Description

30V Dual Asymmetric N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 10 Pages
Datasheet
Download AONY36352 Datasheet


AONY36352
AONY36352
30V Dual Asymmetric N-Channel MOSFET
General Description
• Trench Power MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Q1
30V
49A
<5.3mΩ
<9.1mΩ
Q2
30V
85A
<2mΩ
<2.5mΩ
Applications
• DC/DC Converters in Computing
• POL in Telecom and Industrial
100% UIS Tested
100% Rg Tested
Top View
DFN 5X6D
S2
Pin 1
Bottom View
G2
S1/D2
D1
G1
D1 Pin 1
Top View
Bottom View
Orderable Part Number
AONY36352
Package Type
DFN 5x6D
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
30
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.01mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
±20
49
31
100
18.5
15
50
13
21
8.5
±12
85G
72.5
235
30
24
80
32
45
18
TA=25°C
Power Dissipation A TA=70°C
PDSM
3.1
2
3.1
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJC
Typ Q1 Typ Q2 Max Q1 Max Q2
30 30 40 40
50 50 65 65
4.6 2.2
6
2.8
Units
°C/W
°C/W
°C/W
Rev.1.1: October 2018
www.aosmd.com
Page 1 of 10

AONY36352
AONY36352
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250μA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±20V
VDS=VGS, ID=250mA
VGS=10V, ID=20A
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75W,
RGEN=3W
IF=20A, di/dt=500A/ms
IF=20A, di/dt=500A/ms
Min
30
1.3
0.9
Typ
1.7
4.4
6.7
7.3
53
0.7
820
230
35
1.8
11
5
2.6
1.5
6
4
18
2.5
9.5
12.5
Max Units
1
5
±100
2.1
5.3
8.1
9.1
1
30
V
μA
nA
V
mΩ
S
V
A
pF
pF
pF
2.7 Ω
20 nC
10 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.1: October 2018
www.aosmd.com
Page 2 of 10


Features AONY36352 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current C apability • RoHS and Halogen-Free Com pliant Product Summary VDS ID (at VGS =10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 49A <5.3mΩ <9.1mΩ Q2 30V 85A <2mΩ <2.5mΩ Applications • DC/DC Converters in Computing • P OL in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN 5X 6D S2 Pin 1 Bottom View G2 S1/D2 D1 G 1 D1 Pin 1 Top View Bottom View Orde rable Part Number AONY36352 Package Ty pe DFN 5x6D Form Minimum Order Quanti ty Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise note d Parameter Symbol Max Q1 Max Q2 D rain-Source Voltage VDS 30 30 Gate-S ource Voltage Continuous Drain TC=25 C Current TC=100°C Pulsed Drain Cu rrent C Continuous Drain Current Avala nche Current C TA=25°C TA=70°C Aval anche energy L=0.01mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EA.
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