AOTF5N100

AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT5N100L & AOTF5N100L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 1100@150℃ 4A < 4.2Ω D AOT5N100 S D G AOTF5N100 S GD G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT5N100 Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID 4 2.5 Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25oC PD 195 1.6 AOTF5N100 1000 ±30 4* 2.5* 15 2.8 117 235 5 42 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. AOT5N100 65 0.5 0.6...