AON6144 N-Channel MOSFET Datasheet

AON6144 Datasheet, PDF, Equivalent


Part Number

AON6144

Description

40V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AON6144 Datasheet


AON6144
AON6144
40V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
40V
100A
< 2.4mΩ
< 3.5mΩ
Applications
• Synchronous Rectification for AC-DC/DC-DC converter
• Motor drive for 12V-24V systems
• Oring switches
100% UIS Tested
100% Rg Tested
Top View
DFN5x6
Bottom View
PIN1
Top View
18
27
36
45
D
G
S
Orderable Part Number
AON6144
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy
VDS Spike I
Power Dissipation B
L=0.3mH
10µs
TC=25°C
TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
40
1.3
Maximum
40
±20
100
89
285
40
32
33
163
48
78
31
6.2
4.0
-55 to 150
Max
20
50
1.6
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: November 2015
www.aosmd.com
Page 1 of 6

AON6144
AON6144
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=40V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=20V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.0,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Min
40
1.4
0.3
Typ
1.85
2.0
3.0
2.7
100
0.68
3780
675
60
0.7
50
22
11.5
4
11
3.5
36
3
17
45
Max Units
1
5
±100
2.4
2.4
3.6
3.5
1
90
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
1.1 Ω
70 nC
34 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2015
www.aosmd.com
Page 2 of 6


Features AON6144 40V N-Channel MOSFET General De scription • Trench Power MV MOSFET te chnology • Low RDS(ON) • Low Gate C harge Product Summary VDS ID (at VGS=1 0V) RDS(ON) (at VGS=10V) RDS(ON) (at VG S=4.5V) 40V 100A < 2.4mΩ < 3.5mΩ Applications • Synchronous Rectificat ion for AC-DC/DC-DC converter • Motor drive for 12V-24V systems • Oring sw itches 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 To p View 18 27 36 45 D G S Orderable Pa rt Number AON6144 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quant ity 3000 Absolute Maximum Ratings TA=2 5°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gat e-Source Voltage Continuous Drain TC=2 5°C Current G TC=100°C Pulsed Drai n Current C Continuous Drain Current A valanche Current C TA=25°C TA=70°C Avalanche energy VDS Spike I Power Diss ipation B L=0.3mH 10µs TC=25°C TC=10 0°C C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range .
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