AO4290A Channel AlphaSGT Datasheet

AO4290A Datasheet, PDF, Equivalent


Part Number

AO4290A

Description

100V Channel AlphaSGT

Manufacture

Alpha & Omega Semiconductors

Total Page 5 Pages
Datasheet
Download AO4290A Datasheet


AO4290A
AO4290A
100V Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Logic Driven
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100V
15.5A
< 6.4mΩ
< 7.6mΩ
Applications
• Synchronous Rectification for Quick Charger 3.0
• Synchronous Rectification for AC/DC adapter and
DC/DC brick power
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
PIN1
Orderable Part Number
AO4290A
PIN1
Package Type
SO-8
Top View
18
27
36
45
G
D
S
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH
C
VGS
ID
IDM
IAS
EAS
VDS Spike
Power Dissipation B
10µs
TA=25°C
TA=70°C
VSPIKE
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
15.5
12
62
44
97
120
3.1
2.0
-55 to 150
Units
V
V
A
A
mJ
V
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Rev.1.0: July 2016
www.aosmd.com
Page 1 of 5

AO4290A
AO4290A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=15.5A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=13.5A
VDS=5V, ID=15.5A
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=15.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=3.25,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=15.5A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=15.5A, di/dt=500A/µs
Min
100
1.3
0.5
Typ
1.75
5.3
9.5
6.1
90
0.68
4525
345
22.5
1.1
65
30
10
9
10
6
52
10
32
162
Max Units
1
5
±100
2.3
6.4
11.5
7.6
1
4
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
1.8 Ω
95 nC
45 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2016
www.aosmd.com
Page 2 of 5


Features AO4290A 100V Channel AlphaSGT TM Genera l Description • Trench Power AlphaSGT TM technology • Low RDS(ON) • Logic Driven • RoHS and Halogen-Free Compl iant Product Summary VDS ID (at VGS=10 V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 100V 15.5A < 6.4mΩ < 7.6mΩ Applications • Synchronous Rectifica tion for Quick Charger 3.0 • Synchron ous Rectification for AC/DC adapter and DC/DC brick power 100% UIS Tested 100 % Rg Tested Top View D D D D SOIC-8 B ottom View G S S S PIN1 Orderable Part Number AO4290A PIN1 Package Type SO-8 Top View 18 27 36 45 G D S Form M inimum Order Quantity Tape & Reel 300 0 Absolute Maximum Ratings TA=25°C un less otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Sourc e Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche ener gy L=0.1mH C VGS ID IDM IAS EAS VDS Spike Power Dissipation B 10µs TA=25 C TA=70°C VSPIKE PD Junction and Storage Temperature Range TJ, TSTG Maximum 100.
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