AOB9N70

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 800V@150℃ 9A < 1.2Ω TO-220 Top View TO-220F TO-263 D2PAK D D AOT9N70 S D G AOTF9N70 GDS G AOB9N70 S G S Orderable Part Number AOT9N70 AOTF9N70 AOTF9N70L AOB9N70L Package Type TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green Form Tube Tube Tube Tape & Reel Minimum Order Quantity 1000 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)9N70 Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt 9 5.8 TC=25°C Power Dissipation B Derate above 25oC PD 236 1.8 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbo...