AOT2140L N-Channel MOSFET Datasheet

AOT2140L Datasheet, PDF, Equivalent


Part Number

AOT2140L

Description

40V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AOT2140L Datasheet


AOT2140L
AOT2140L/AOB2140L
40V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• Optimized Ruggedness
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
40V
195A
< 1.5mΩ
< 2mΩ
Applications
• DC Motor Driver
• Synchronous Rectification in DC/DC and AC/DC
Converters
100% UIS Tested
100% Rg Tested
Top View
D
TO220
Bottom View
D
Top View
D
TO-263
D2PAK
Bottom View
D
D
GD S
AOT2140L
Orderable Part Number
AOT2140L
AOB2140L
S DG
S
G
AOB2140L
Package Type
TO-220
TO-263
Form
Tube
Tape & Reel
G
S
G
S
Minimum Order Quantity
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy L=0.3mH
TC=25°C
Power Dissipation B TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
195
195
1000
57
45.5
70
735
272
136
8.3
5.3
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
50
0.42
Max
15
60
0.55
Units
°C/W
°C/W
°C/W
Rev.1.0: September 2017
www.aosmd.com
Page 1 of 6

AOT2140L
AOT2140L/AOB2140L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=40V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Qoss
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=20V, ID=20A
Gate Drain Charge
Output Charge
Turn-On DelayTime
VGS=0V, VDS=20V
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Min
40
1.3
1.3
Typ
1.8
1.2
1.75
1.5
100
0.66
9985
1635
95
2.6
128
54
29
11
67
16
16
125
27
29
107
Max Units
1
5
±100
2.3
1.5
2.2
2.0
1
195
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
3.9 Ω
180 nC
80 nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2017
www.aosmd.com
Page 2 of 6


Features AOT2140L/AOB2140L 40V N-Channel AlphaSGT TM General Description • Trench Pow er AlphaSGTTM technology • Low RDS(ON ) • Low Gate Charge • Optimized Rug gedness • RoHS and Halogen-Free Compl iant Product Summary VDS ID (at VGS=10 V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 40V 195A < 1.5mΩ < 2mΩ App lications • DC Motor Driver • Synch ronous Rectification in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Te sted Top View D TO220 Bottom View D Top View D TO-263 D2PAK Bottom View D D GD S AOT2140L Orderable Part Numb er AOT2140L AOB2140L S DG S G AOB2140 L Package Type TO-220 TO-263 Form Tub e Tape & Reel G S G S Minimum Order Quantity 1000 800 Absolute Maximum Ra tings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C P ulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C C VGS ID ID.
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