AOU2N60A N-Channel MOSFET Datasheet

AOU2N60A Datasheet, PDF, Equivalent


Part Number

AOU2N60A

Description

2A N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AOU2N60A Datasheet


AOU2N60A
AOD2N60A/AOI2N60A/AOU2N60A
600V,2A N-Channel MOSFET
General Description
• Advanced High Voltage MOSFET technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
Product Summary
VDS @ Tj,max
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
700V
2A
< 4.7
Applications
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
Bottom View
Top View
TO251A
IPAK
Bottom View
TO-251
IPAK
Top View
Bottom View
D
D
D
S
G
AOD2N60A
G
S
Orderable Part Number
AOD2N60A
AOI2N60A
AOU2N60A
S
D
G
AOI2N60A
G
D
S
Package Type
TO-252
TO-251A
TO-251
S
D
G
AOU2N60A
G
SD
G
S
Form
Tape & Reel
Tube
Tube
Minimum Order Quantity
2500
4000
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
CurrentB
TC=25°C
TC=100°C
Pulsed Drain Current C
Avalanche Current C,I
Repetitive avalanche energy C,I
Single pulsed avalanche energy H
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
Maximum
600
±30
2
1.4
6
4.6
10.6
97
5
57
0.45
-50 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
40
-
1.8
Maximum
50
0.5
2.2
Units
°C/W
°C/W
°C/W
Rev.2.0: May 2014
www.aosmd.com
Page 1 of 6

AOU2N60A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1A
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=40V, ID=1A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=2A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=2A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=2A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V
600
700
V
0.7 V/ oC
1
µA
10
±100 nΑ
3.4 4 4.5 V
3.9 4.7
2.8 S
0.79 1
V
2A
6A
295 pF
30 pF
2.3 pF
3.2
6.5 11 nC
1.5 nC
1.8 nC
16 ns
11 ns
28 ns
14 ns
268 ns
1.6 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.8A, VDD=150V, RG=10, Starting TJ=25°C.
I. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: May 2014
www.aosmd.com
Page 2 of 6


Features AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Cha nnel MOSFET General Description • Ad vanced High Voltage MOSFET technology Low RDS(ON) • Low Ciss and Crss High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) ( at VGS=10V) 700V 2A < 4.7Ω Applicat ions • General Lighting for LED and C CFL • AC/DC Power supplies for Indust rial, Consumer, and Telecom 100% UIS T ested 100% Rg Tested TO252 DPAK Top V iew Bottom View Top View TO251A IPAK Bottom View TO-251 IPAK Top View Bo ttom View D D D S G AOD2N60A G S O rderable Part Number AOD2N60A AOI2N60A AOU2N60A S D G AOI2N60A G D S Packag e Type TO-252 TO-251A TO-251 S D G AOU 2N60A G SD G S Form Tape & Reel Tub e Tube Minimum Order Quantity 2500 400 0 4000 Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter S ymbol Drain-Source Voltage VDS Gate- Source Voltage Continuous Drain Curren tB TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C,I Repetitive .
Keywords AOU2N60A, datasheet, pdf, Alpha & Omega Semiconductors, 2A, N-Channel, MOSFET, OU2N60A, U2N60A, 2N60A, AOU2N60, AOU2N6, AOU2N, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)