Document
AOD2N60A/AOI2N60A/AOU2N60A
600V,2A N-Channel MOSFET
General Description
• Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant
Product Summary
VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V)
700V 2A < 4.7Ω
Applications
• General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom
100% UIS Tested 100% Rg Tested
TO252 DPAK
Top View
Bottom View
Top View
TO251A IPAK
Bottom View
TO-251 IPAK
Top View
Bottom View
D
D D
S
G AOD2N60A
G S
Orderable Part Number
AOD2N60A AOI2N60A AOU2N60A
S D G AOI2N60A
G D S
Package Type
TO-252 TO-251A TO-251
S D G AOU2N60A
G SD
G
S
Form
Tape & Reel Tube Tube
Minimum Order Quantity
2500 4000 4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain CurrentB
TC=25°C TC=100°C
Pulsed Drain Current C
Avalanche Current C,I
Repetitive avalanche energy C,I
Single pulsed avalanche energy H
Peak diode recovery dv/dt
VGS
ID
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
Maximum 600 ±30 2 1.4 6 4.6 10.6 97 5 57 0.45
-50 to 150
300
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F
Symbol RθJA RθCS RθJC
Typical 40
1.8
Maximum 50
0.5 2.2
Units °C/W
°C/W °C/W
Rev.2.0: May 2014
www.aosmd.com
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C
BVDSS /∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1A
gFS Forward Transconductance VSD Diode Forward Voltage
VDS=40V, ID=1A IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current C
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=2A
Qgd Gate Drain Charge
tD(on) tr tD(off)
Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=300V, ID=2A, RG=25Ω
tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=2A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V
600 700
V
0.7 V/ oC
1 µA
10
±100 nΑ
3.4 4 4.5 V
3.9 4.7
Ω
2.8 S
0.79 1
V
2A
6A
295 pF 30 pF 2.3 pF 3.2 Ω
6.5 11 nC 1.5 nC 1.8 nC 16 ns 11 ns 28 ns 14 ns 268 ns 1.6 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1.8A, VDD=150V, RG=10Ω, Starting TJ=25°C.
I. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: May 2014
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 10
7V
VDS=40V
-55°C
4
10V
3
ID(A)
6V
VDS 1
2
5.5V
125°C
ID (A)
1 VGS=5V
0 0 5 10 15 20 25 30
VDS (Volts) Fig 1: On-Region Characteristics
25°C
0.1 2
468
VGS(Volts) Figure 2: Transfer Characteristics
10
RDS(ON) (Ω)
10
8
6 VGS=10V
4
2
0 012345 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
Normalized On-Resistance
3
2.5
2 VGS=10V ID=1A
1.5
1
0.5
0 -100 -50 0 50 1.