DatasheetsPDF.com

AOU2N60A Dataheets PDF



Part Number AOU2N60A
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 2A N-Channel MOSFET
Datasheet AOU2N60A DatasheetAOU2N60A Datasheet (PDF)

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V 2A < 4.7Ω Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested TO252 DPAK Top View Bottom View Top View TO251A IPAK Bottom .

  AOU2N60A   AOU2N60A


Document
AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V 2A < 4.7Ω Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested TO252 DPAK Top View Bottom View Top View TO251A IPAK Bottom View TO-251 IPAK Top View Bottom View D D D S G AOD2N60A G S Orderable Part Number AOD2N60A AOI2N60A AOU2N60A S D G AOI2N60A G D S Package Type TO-252 TO-251A TO-251 S D G AOU2N60A G SD G S Form Tape & Reel Tube Tube Minimum Order Quantity 2500 4000 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C,I Repetitive avalanche energy C,I Single pulsed avalanche energy H Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 2 1.4 6 4.6 10.6 97 5 57 0.45 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ oC °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 40 1.8 Maximum 50 0.5 2.2 Units °C/W °C/W °C/W Rev.2.0: May 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A gFS Forward Transconductance VSD Diode Forward Voltage VDS=40V, ID=1A IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=480V, ID=2A Qgd Gate Drain Charge tD(on) tr tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=300V, ID=2A, RG=25Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=2A,dI/dt=100A/µs,VDS=100V Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V 600 700 V 0.7 V/ oC 1 µA 10 ±100 nΑ 3.4 4 4.5 V 3.9 4.7 Ω 2.8 S 0.79 1 V 2A 6A 295 pF 30 pF 2.3 pF 3.2 Ω 6.5 11 nC 1.5 nC 1.8 nC 16 ns 11 ns 28 ns 14 ns 268 ns 1.6 µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1.8A, VDD=150V, RG=10Ω, Starting TJ=25°C. I. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: May 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10 7V VDS=40V -55°C 4 10V 3 ID(A) 6V VDS 1 2 5.5V 125°C ID (A) 1 VGS=5V 0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 25°C 0.1 2 468 VGS(Volts) Figure 2: Transfer Characteristics 10 RDS(ON) (Ω) 10 8 6 VGS=10V 4 2 0 012345 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance 3 2.5 2 VGS=10V ID=1A 1.5 1 0.5 0 -100 -50 0 50 1.


AOB2140L AOU2N60A AOD2146


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)