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AON7140 Dataheets PDF



Part Number AON7140
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 40V N-Channel MOSFET
Datasheet AON7140 DatasheetAON7140 Datasheet (PDF)

AON7140 40V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 50A < 2.3mΩ < 3.5mΩ Applications • Synchronous Rectification for AC-DC/DC-DC converter • Motor drive for 12V-24V systems • Oring switches 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 Top View Bottom View Pin 1 Pin 1 Orderable Part Number AON7140 Package Type DFN 3.3x3.3 Top View 18 27 36 4.

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AON7140 40V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 50A < 2.3mΩ < 3.5mΩ Applications • Synchronous Rectification for AC-DC/DC-DC converter • Motor drive for 12V-24V systems • Oring switches 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 Top View Bottom View Pin 1 Pin 1 Orderable Part Number AON7140 Package Type DFN 3.3x3.3 Top View 18 27 36 45 G D S Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy VDS Spike I Power Dissipation B L=0.3mH 10µs TC=25°C TC=100°C C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 50 50 200 31.5 25.5 30 135 48 46 18.5 4.1 2.6 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 25 50 1.8 Max 30 60 2.7 Units °C/W °C/W °C/W Rev.1.0: December 2015 www.aosmd.com Page 1 of 6 AON7140 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=40V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Total Gate Charge Gate Source Charge VGS=10V, VDS=20V, ID=20A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs Min 40 1.4 0.4 Typ 1.85 1.9 3.0 2.7 100 0.67 3350 580 65 0.85 42 18 11.5 3.5 9 3.5 34 3 16 42 Max Units 1 5 ±100 2.4 2.3 3.7 3.5 1 50 V µA nA V mΩ mΩ S V A pF pF pF 1.3 Ω 60 nC 26 nC nC nC ns ns ns ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: December 2015 www.aosmd.com Page 2 of 6 AON7140 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 4.5V 3.5V 80 10V 60 100 VDS=5V 80 60 ID (A) ID (A) 40 40 125°C RDS(ON) (mΩ) 20 VGS=3V 0 012345 VDS (Volts) Figure 1: On-Region Characteristics (Note E) 5 20 25°C 0 1234 VGS (Volts) Figure 2: Transfer Characteristics (Note E) 5 2 4 VGS=4.5V 3 2 VGS=10V 1 Normalized On-Resistance 1.8 VGS=10V 1.6 ID=20A 1.4 1.2 VGS=4.5V 1 ID=20A 0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (N.


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