Document
AON7140
40V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
40V 50A < 2.3mΩ < 3.5mΩ
Applications
• Synchronous Rectification for AC-DC/DC-DC converter • Motor drive for 12V-24V systems • Oring switches
100% UIS Tested 100% Rg Tested
DFN 3.3x3.3
Top View
Bottom View
Pin 1
Pin 1
Orderable Part Number
AON7140
Package Type
DFN 3.3x3.3
Top View
18 27 36 45
G
D S
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy VDS Spike I
Power Dissipation B
L=0.3mH 10µs TC=25°C TC=100°C
C
VGS ID
IDM IDSM
IAS EAS VSPIKE PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 40 ±20 50 50 200 31.5 25.5 30 135 48 46 18.5 4.1 2.6
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 25 50 1.8
Max 30 60 2.7
Units °C/W °C/W °C/W
Rev.1.0: December 2015
www.aosmd.com
Page 1 of 6
AON7140
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=40V, VGS=0V
IGSS VGS(th)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz f=1MHz
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
VGS=10V, VDS=20V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Min 40 1.4
0.4
Typ
1.85 1.9 3.0 2.7 100 0.67
3350 580 65 0.85
42 18 11.5 3.5 9 3.5 34 3 16 42
Max Units
1 5 ±100 2.4 2.3 3.7 3.5
1 50
V
µA
nA V
mΩ
mΩ S V A
pF pF pF 1.3 Ω
60 nC 26 nC
nC nC ns ns ns ns
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2015
www.aosmd.com
Page 2 of 6
AON7140
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 4.5V
3.5V
80 10V
60
100 VDS=5V
80
60
ID (A)
ID (A)
40 40 125°C
RDS(ON) (mΩ)
20 VGS=3V
0 012345
VDS (Volts) Figure 1: On-Region Characteristics (Note E)
5
20 25°C
0 1234
VGS (Volts) Figure 2: Transfer Characteristics (Note E)
5
2
4
VGS=4.5V 3
2
VGS=10V 1
Normalized On-Resistance
1.8 VGS=10V
1.6 ID=20A
1.4
1.2 VGS=4.5V
1 ID=20A
0 0 5 10 15 20 25 30
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (N.