AON7140 N-Channel MOSFET Datasheet

AON7140 Datasheet, PDF, Equivalent


Part Number

AON7140

Description

40V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AON7140 Datasheet


AON7140
AON7140
40V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
40V
50A
< 2.3mΩ
< 3.5mΩ
Applications
• Synchronous Rectification for AC-DC/DC-DC converter
• Motor drive for 12V-24V systems
• Oring switches
100% UIS Tested
100% Rg Tested
DFN 3.3x3.3
Top View
Bottom View
Pin 1
Pin 1
Orderable Part Number
AON7140
Package Type
DFN 3.3x3.3
Top View
18
27
36
45
G
D
S
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Avalanche energy
VDS Spike I
Power Dissipation B
L=0.3mH
10µs
TC=25°C
TC=100°C
C
VGS
ID
IDM
IDSM
IAS
EAS
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
50
50
200
31.5
25.5
30
135
48
46
18.5
4.1
2.6
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
25
50
1.8
Max
30
60
2.7
Units
°C/W
°C/W
°C/W
Rev.1.0: December 2015
www.aosmd.com
Page 1 of 6

AON7140
AON7140
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=40V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=20V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.0,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Min
40
1.4
0.4
Typ
1.85
1.9
3.0
2.7
100
0.67
3350
580
65
0.85
42
18
11.5
3.5
9
3.5
34
3
16
42
Max Units
1
5
±100
2.4
2.3
3.7
3.5
1
50
V
µA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
1.3 Ω
60 nC
26 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2015
www.aosmd.com
Page 2 of 6


Features AON7140 40V N-Channel MOSFET General De scription • Trench Power MV MOSFET te chnology • Low RDS(ON) • Low Gate C harge Product Summary VDS ID (at VGS=1 0V) RDS(ON) (at VGS=10V) RDS(ON) (at VG S=4.5V) 40V 50A < 2.3mΩ < 3.5mΩ A pplications • Synchronous Rectificati on for AC-DC/DC-DC converter • Motor drive for 12V-24V systems • Oring swi tches 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 Top View Bottom View Pin 1 Pin 1 Orderable Part Number AON7140 Package Type DFN 3.3x3.3 Top View 18 27 36 45 G D S Form Tape & Reel Mi nimum Order Quantity 3000 Absolute Max imum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Cont inuous Drain TC=25°C Current G TC=10 0°C Pulsed Drain Current C Continuou s Drain Current Avalanche Current C TA =25°C TA=70°C Avalanche energy VDS S pike I Power Dissipation B L=0.3mH 10 s TC=25°C TC=100°C C VGS ID IDM ID SM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage T.
Keywords AON7140, datasheet, pdf, Alpha & Omega Semiconductors, 40V, N-Channel, MOSFET, ON7140, N7140, 7140, AON714, AON71, AON7, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)