HMC756

Amplifiers - Linear & Power - Chip v02.0110 Typical Applications The HMC756 is ideal for: Point-to-Point Radios 3 Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram HMC756 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Features Saturated Output Power: +33 dBm @ 28% PAE High Output IP3: +41 dBm High Gain: 23 dB DC Supply: +7V @ 790mA DC Blocked RF I/Os No External Matching Required Die Size: 2.4 x 1.6 x 0.1 mm General Description The HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = Vdd1, = Vdd2 = +7V, Idd = 790mA [1] Parameter Min. Typ. Max. Min. Typ. Max. Frequency Range 16 - 20 20 - 24 Gain 19 22 20 23 Gain Variation Over Temperature 0.026 0.03 Input Return Loss 16 15 Output Return Loss 18 16 Output Power for 1 dB Compression (P1dB) 29 31 30 32 Saturated Output Power (Psat) 33 33 Output Third Order Intercept (IP3)[2] 41 40 Total Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 790mA typical. [2] Measurement taken at +7V @ 790mA, Pin / Tone = +17 dBm 790 790 ...