NTHS4166N

NTHS4166N MOSFET – Power, Single, N-Channel, ChipFET Package 30 V, 8.2 A Features Trench Technology Low RDS(on) to Minimize Conduction Losses Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6 Excellent Thermal Capabilities This is a Pb−Free Device Applications Load Switching DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJA, t v 5 s Power Dissipation RqJA (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) RqJF Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 20 Apk, L = 0.1 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8” from case for 10 s) VDSS VGS ID PD ID PD ID PD IDM TJ, TSTG IS EAS TL 30 ±20 6.6 4.8 1.5 4.9 3.6 0.8 8.2 5.9 2.2 32 −55 to 150 2.6 20 260 V V A W A W A W A °C A mJ °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended...