FGH60N60SMD

IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A High Input Impedance Fast Switching: EOFF = 7.5 uJ/A Tightened Parameter Distribution This Device is Pb−Free and is RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC, Telecom, ESS www.onsemi.com VCES 600 V IC 60 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH60N60 SMD © Semiconductor Components Industries, LLC, 2010 January, 2020 − Rev. 3 $Y &Z &3 &K FGH60N60SMD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH60N60SMD/D FGH60N60SMD ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 600 V ±20 V ±30 V IC Collector Current TC = 25°C 120 A TC = 100°C 60 A ICM (Note 1) Pulsed Collector Current 180 A IF Diode Forw...