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FGD3440G2-F085V

ON Semiconductor

N-Channel IGBT

EcoSPARK) 2 N-Channel Ignition IGBT 335 mJ, 400 V FGD3440G2-F085V Features • SCIS Energy = 335 mJ at TJ = 25°C • Logic ...


ON Semiconductor

FGD3440G2-F085V

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Description
EcoSPARK) 2 N-Channel Ignition IGBT 335 mJ, 400 V FGD3440G2-F085V Features SCIS Energy = 335 mJ at TJ = 25°C Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications Automotive Ignition Coil Driver Circuits High Current Ignition System Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 28 V Battery Condition (IC = 10 mA) ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 335 mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 195 mJ IC25 IC110 VGEM PD TJ Collector Current Continuous at VGE = 4.0 V, TC = 25°C Collector Current Continuous at VGE = 4.0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature 26.9 25 ±10 166 1.1 −40 to +175 A A V W W/°C °C TSTG Storage Junction Temperature Range −40 to +175 °C TL Max. Lead Temperature for Soldering 300 °C (Leads at 1.6 mm from case for 10 s) TPKG Max. Lead Temperature for Soldering 260 °C (Package Body for 10 s) ESD HBM−Electrostatic Discharge Voltage 4 kV at 100 pF, 1500 W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed...




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