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ISL9V3040S3ST-F085C Dataheets PDF



Part Number ISL9V3040S3ST-F085C
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel IGBT
Datasheet ISL9V3040S3ST-F085C DatasheetISL9V3040S3ST-F085C Datasheet (PDF)

ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040x3ST-F085C Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA.

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ECOSPARK) Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT ISL9V3040x3ST-F085C Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage − Reverse 24 V Battery Condition (IC = 10 mA) ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1) ESCIS150 ISCIS = 10.6 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2) IC25 Collector Current Continuous at VGE = 4.0 V, TC = 25°C IC110 Collector Current Continuous at VGE = 4.0 V, TC = 110°C VGEM Gate to Emitter Voltage Continuous 300 mJ 170 mJ 21 A 17 A ±10 V PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ, TSTG Operating Junction and Storage Temperature 150 1 −55 to +175 W W/°C °C TL Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 300 °C TPKG Reflow Soldering according to JESD020C 260 °C ESD HBM−Electrostatic Discharge Voltage 4 kV at 100 pF, 1500 W CDM−Electrostatic Discharge Voltage 2 kV at 1 W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.6 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. GATE DATA SHEET www.onsemi.com COLLECTOR R1 R2 EMITTER DPAK3 CASE 369AS D2PAK−3 CASE 418AJ TO−220−3LD CASE 340AT MARKING DIAGRAMS AYWW XXX XXXXXG AYWWZZ V3040PC A Y WW XXXX G ZZ V3040PC = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Assembly Lot Number = Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 November, 2021 − Rev. 2 Publication Order Number: ISL9V3040−F085C/D ISL9V3040x3ST−F085C THERMAL RESISTANCE RATINGS Characteristic Junction−to−Case – Steady State (Drain) Symbol RqJC Max 1 Units °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Parameter Test Conditions Min Typ. Max. Units OFF CHARACTERISTICS BVCER Collector to Emitter Breakdown Voltage BVCES Collector to Emitter Breakdown Voltage BVECS BVGES ICER Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance ON CHARACTERISTICS VCE(SAT) Collector to Emitter Saturation Voltage ICE = 2 mA, VGE = 0 V, RGE = 1 kW, TJ = −40 to 150°C ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = −40 to 150°C ICE = −75 mA, VGE = 0 V, TJ = 25°C IGES = ±2 mA VCE = 175 V RGE = 1 kW TJ = 25°C TJ = 150°C VEC = 24 V TJ = 25°C TJ = 150°C ICE = 6 A, VGE = 4 V, TJ = 25°C 370 400 430 V 390 420 450 V 30 − − V ±12 ±14 − V − − 25 mA − − 1 mA − − 1 mA − − 40 − 70 − W 10K − 26K W − 1.25 1.65 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10 A, VGE = 4.5 V, TJ = 150°C − 1.58 1.80 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15 A, VGE = 4.5 V, TJ = 150°C − 1.90 2.20 V DYNAMIC CHARACTERISTICS QG(ON) VGE(TH) Gate Charge Gate to Emitter Threshold Voltage VGEP Gate to Emitter Plateau Voltage SWITCHING CHARACTERISTICS ICE = 10 A, VCE = 12 V, VGE = 5 V ICE = 1 mA VCE = VGE TJ = 25°C TJ = 150°C VCE = 12 V, ICE = 10 A − 17 1.3 − 0.75 − − 3.0 − nC 2.2 V 1.8 − V td(ON)R trR Current Turn−On Delay Time−Resistive Current Rise Time−Resistive VCE = 14 V, RL = 1 W, VGE = 5 V, RG = 470 W, TJ = 25°C − 0.7 4 ms − 2.1 7 td(OFF)L tfL Current Turn−Off Delay Time−Inductive Current Fall Time−Inductive VCE = 300 V, L = 1 mH, VGE = 5 V, RG = 470 W, ICE = 6.5 A, TJ = 25°C − 4.8 15 − 2.8 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 ISL9V3040x3ST−F085C TYPICAL CHARACTERISTICS Figure 1. Self Clamp.


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