Document
ECOSPARK) Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
ISL9V3040x3ST-F085C
Features
• SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant
Applications
• Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA)
400
V
BVECS Emitter to Collector Voltage − Reverse
24
V
Battery Condition (IC = 10 mA)
ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25°C (Note 1)
ESCIS150 ISCIS = 10.6 A, L = 3.0 mHy, RGE = 1 KW, TC = 150°C (Note 2)
IC25 Collector Current Continuous at VGE = 4.0 V, TC = 25°C
IC110 Collector Current Continuous at VGE = 4.0 V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
300
mJ
170
mJ
21
A
17
A
±10
V
PD Power Dissipation Total, TC = 25°C
Power Dissipation Derating, TC > 25°C
TJ, TSTG Operating Junction and Storage Temperature
150 1
−55 to +175
W W/°C
°C
TL Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
300
°C
TPKG Reflow Soldering according to JESD020C
260
°C
ESD HBM−Electrostatic Discharge Voltage
4
kV
at 100 pF, 1500 W
CDM−Electrostatic Discharge Voltage
2
kV
at 1 W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on
the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.6 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
GATE
DATA SHEET www.onsemi.com
COLLECTOR
R1 R2
EMITTER
DPAK3 CASE 369AS
D2PAK−3 CASE 418AJ
TO−220−3LD CASE 340AT
MARKING DIAGRAMS
AYWW XXX XXXXXG
AYWWZZ V3040PC
A Y WW XXXX G ZZ V3040PC
= Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Assembly Lot Number = Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
November, 2021 − Rev. 2
Publication Order Number: ISL9V3040−F085C/D
ISL9V3040x3ST−F085C
THERMAL RESISTANCE RATINGS Characteristic
Junction−to−Case – Steady State (Drain)
Symbol RqJC
Max 1
Units °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Typ.
Max. Units
OFF CHARACTERISTICS
BVCER
Collector to Emitter Breakdown Voltage
BVCES
Collector to Emitter Breakdown Voltage
BVECS
BVGES ICER
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
ON CHARACTERISTICS
VCE(SAT) Collector to Emitter Saturation Voltage
ICE = 2 mA, VGE = 0 V, RGE = 1 kW, TJ = −40 to 150°C
ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = −40 to 150°C
ICE = −75 mA, VGE = 0 V, TJ = 25°C
IGES = ±2 mA
VCE = 175 V RGE = 1 kW
TJ = 25°C TJ = 150°C
VEC = 24 V
TJ = 25°C
TJ = 150°C
ICE = 6 A, VGE = 4 V, TJ = 25°C
370
400
430
V
390
420
450
V
30
−
−
V
±12
±14
−
V
−
−
25
mA
−
−
1
mA
−
−
1
mA
−
−
40
−
70
−
W
10K
−
26K
W
−
1.25
1.65
V
VCE(SAT) Collector to Emitter Saturation Voltage
ICE = 10 A, VGE = 4.5 V, TJ = 150°C
−
1.58
1.80
V
VCE(SAT) Collector to Emitter Saturation Voltage
ICE = 15 A, VGE = 4.5 V, TJ = 150°C
−
1.90
2.20
V
DYNAMIC CHARACTERISTICS
QG(ON) VGE(TH)
Gate Charge Gate to Emitter Threshold Voltage
VGEP
Gate to Emitter Plateau Voltage
SWITCHING CHARACTERISTICS
ICE = 10 A, VCE = 12 V, VGE = 5 V
ICE = 1 mA VCE = VGE
TJ = 25°C TJ = 150°C
VCE = 12 V, ICE = 10 A
−
17
1.3
−
0.75
−
−
3.0
−
nC
2.2
V
1.8
−
V
td(ON)R trR
Current Turn−On Delay Time−Resistive
Current Rise Time−Resistive
VCE = 14 V, RL = 1 W, VGE = 5 V, RG = 470 W, TJ = 25°C
−
0.7
4
ms
−
2.1
7
td(OFF)L tfL
Current Turn−Off Delay Time−Inductive
Current Fall Time−Inductive
VCE = 300 V, L = 1 mH, VGE = 5 V, RG = 470 W, ICE = 6.5 A, TJ = 25°C
−
4.8
15
−
2.8
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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ISL9V3040x3ST−F085C
TYPICAL CHARACTERISTICS
Figure 1. Self Clamp.