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FGD3040G2-F085V

ON Semiconductor

N-Channel IGBT

FGD3040G2-F085V EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ...


ON Semiconductor

FGD3040G2-F085V

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Description
FGD3040G2-F085V EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features SCIS Energy = 300 mJ at TJ = 25°C Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable RoHS Compliant Applications Automotive Ignition Coil Driver Circuits Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Value Units BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) Self Clamping Inductive Switching Energy (Note 1) 400 28 300 V V mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 170 mJ IC25 IC110 VGEM Collector Current Continuous at VGE = 5.0 V, TC = 25°C Collector Current Continuous at VGE = 5.0 V, TC = 110°C Gate to Emitter Voltage Continuous 41 A 25.6 A ±10 V PD Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C TJ Operating Junction and Storage Temperature 150 1 −55 to 175 W W/°C °C TSTG TL Storage Junction Temperature Range Max. Lead Temperature for Soldering (Package Body for 10 s) −55 to 175 300 °C °C TPKG Max. Lead Temperature for Soldering (Package Body for 10 s) 260 °C ESD HBM − Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM − Electrostatic Discharge Voltage at 1 W 2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur ...




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