FGD3050G2

DATA SHEET www.onsemi.com ECOSPARK) II, Ignition IGBT COLLECTOR 300 mJ, 500 V, N−Channel Ignition IGBT FGD3050G2 Features SCIS Energy = 300 mJ at TJ = 25°C Logic Level Gate Drive AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free, Halid Free and is RoHS Compliant Applications Automotive Ignition Coil Driver Circuits Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 500 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 20 V ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 kW 300 mJ TC = 25°C ESCIS150 ISCIS = 11.0 A, L = 3.0 mHy, RGE = 1 kW 180 mJ TC = 150°C IC25 IC110 VGEM PD TJ TSTG TL Collector Current Continuous at VGE = 5.0 V, TC = 25°C Collector Current Continuous at VGE = 5.0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction Temperature Range Storage Junction Temperature Range Max. Lead Temperature for Soldering (Leads at 1.6 mm from case for 10 s) 32 A 27 A ±10 V 150 W 1.1 W/°C −40 to +175 °C −40 to +175 °C 300 °C TPKG Max. Lead Temperature for Soldering (Package Body for 10 s) 260 °C ESD Electrostatic Discharge Voltage at 100 pF, 4 kV 1500 W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalit...