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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 4 A, 650 V, D1, DPAK
FFSD0465A
Description Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
• Max Junction Temperature 175°C • Avalanche Rated 25 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VRRM Peak Repetitive Reverse Voltage
650
V
EAS
Single Pulse Avalanche Energy (Note 1)
25
mJ
IF
Continuous Rectified Forward Current @ TC < 160°C
4
A
Continuous Rectified Forward Current @ TC < 135°C
7.6
IF, Max Non−Repetitive Peak Forward TC = 25°C, 10 ms
360
A
Surge Current
TC = 150°C, 10 ms
330
A
IF, SM
Non−Repetitive Forward Surge Half−Sine Pulse,
Current
tP = 8.3 ms
38
A
IF, RM
Repetitive Forward Surge Current
Half−Sine Pulse, tP = 8.3 ms
18
A
Ptot
Power Dissipation
TC = 25°C
61
W
TC = 150°C
10
W
TJ,TSTG Operating and Storage Temperature Range
−55 to °C +175
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 25 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 10 A, V = 50 V
© Semiconductor Components Industries, LLC, 2018
1
February, 2023 − Rev. 5
DATA SHEET www.onsemi.com
1, 3. Cathode 2. Anode Schottky Diode
3
1 2 DPAK
CASE 369AS
MARKING DIAGRAM
FFS D0465A AYWWZZ
FFSD0465A A YWW ZZ
= Specific Device Code = Assembly Site = Date Code (Year & Week) = Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number: FFSD0465A/D
FFSD0465A
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max.
Value 2.46
Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
VF
Forward Voltage
IF = 4 A, TC = 25°C
−
1.50
1.75
V
IR
Reverse Current
IF = 4 A, TC = 125°C IF = 4 A, TC = 175°C VR = 650 V, TC = 25°C
−
1.6
2.0
−
1.72
2.4
−
−
200
mA
VR = 650 V, TC = 125°C
−
−
400
VR = 650 V, TC = 175°C
−
−
600
QC
Total Capacitive Charge
V = 400 V
−
16
−
nC
C
Total Capacitance
VR = 1 V, f = 100 kHz
−
258
−
pF
VR = 200 V, f = 100 .