DatasheetsPDF.com

FFSD0465A Dataheets PDF



Part Number FFSD0465A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Carbide Schottky Diode
Datasheet FFSD0465A DatasheetFFSD0465A Datasheet (PDF)

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 4 A, 650 V, D1, DPAK FFSD0465A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequ.

  FFSD0465A   FFSD0465A



Document
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 4 A, 650 V, D1, DPAK FFSD0465A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features • Max Junction Temperature 175°C • Avalanche Rated 25 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 650 V EAS Single Pulse Avalanche Energy (Note 1) 25 mJ IF Continuous Rectified Forward Current @ TC < 160°C 4 A Continuous Rectified Forward Current @ TC < 135°C 7.6 IF, Max Non−Repetitive Peak Forward TC = 25°C, 10 ms 360 A Surge Current TC = 150°C, 10 ms 330 A IF, SM Non−Repetitive Forward Surge Half−Sine Pulse, Current tP = 8.3 ms 38 A IF, RM Repetitive Forward Surge Current Half−Sine Pulse, tP = 8.3 ms 18 A Ptot Power Dissipation TC = 25°C 61 W TC = 150°C 10 W TJ,TSTG Operating and Storage Temperature Range −55 to °C +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 25 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 10 A, V = 50 V © Semiconductor Components Industries, LLC, 2018 1 February, 2023 − Rev. 5 DATA SHEET www.onsemi.com 1, 3. Cathode 2. Anode Schottky Diode 3 1 2 DPAK CASE 369AS MARKING DIAGRAM FFS D0465A AYWWZZ FFSD0465A A YWW ZZ = Specific Device Code = Assembly Site = Date Code (Year & Week) = Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FFSD0465A/D FFSD0465A THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. Value 2.46 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit VF Forward Voltage IF = 4 A, TC = 25°C − 1.50 1.75 V IR Reverse Current IF = 4 A, TC = 125°C IF = 4 A, TC = 175°C VR = 650 V, TC = 25°C − 1.6 2.0 − 1.72 2.4 − − 200 mA VR = 650 V, TC = 125°C − − 400 VR = 650 V, TC = 175°C − − 600 QC Total Capacitive Charge V = 400 V − 16 − nC C Total Capacitance VR = 1 V, f = 100 kHz − 258 − pF VR = 200 V, f = 100 .


CM2020-00TR FFSD0465A FFSH1665A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)