AFGB20N60SFD-BW

Field Stop IGBT 600 V, 20 A Product Preview AFGB20N60SFD-BW General Description Using novel field−stop IGBT technology, ON Semiconductor’s new series of field−stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A High Input Impedance Fast Switching AEC−Q101 Qualified to Automotive Requirements These Devices are Pb−Free and are RoHS Compliant Typical Applications Inverters, SMPS, PFC, UPS Automotive Chargers, Converters, High Voltage Auxiliaries ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) Parameter Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Collector Current (TC = 25°C) Collector Current (TC = 100°C) Pulsed Collector Current (Note 1) Diode Forward Current (TC = 25°C) Diode Forward Current (TC = 100°C) Pulsed Diode Maximum Forward Current (Note 1) VCES 600 V VGES ±20 V IC 40 A 20 A ICM 60 A IF 20 A 10 A IFM 60 A Maximum Power Dissipation (TC = 25°C) Maximum Power Dissipation (TC = 100°C) Operating Junction and Storage Temperature Range PD TJ, TSTG 208 83 −55 to +150 W W °C Maximum Lead Temp. For Soldering Purposes, 1/8” from case for 5 seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assume...