FGH80N60FD2

IGBT - Field Stop 600 V, 40 A FGH80N60FD2 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for induction heating and PFC applications where low conduction and switching losses are essential. Features High Current Capability Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 40 A High Input Impedance Fast Switching This Device is Pb−Free and is RoHS Compliant Applications Induction Heating, PFC www.onsemi.com VCES 600 V IC 40 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH80N60 FD2 © Semiconductor Components Industries, LLC, 2008 February, 2020 − Rev. 3 $Y &Z &3 &K FGH80N60FD2 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH80N60FD2/D FGH80N60FD2 ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate−Emitter Voltage ±20 V IC Collector Current TC = 25°C 80 A TC = 100°C 40 A ICM (Note 1) Pulsed Collector Current TC = 25°C 160 A PD Maximum Power Dissipation TC = 25°C 290 W TC = 100°C 116 W TJ Operating Junction Temperature −55 to +150 °C TSTG Storage Temperature Range −55 to +150 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those...