IGBT - SMPS 600 V, 60 A
HGTG30N60A4
Description The HGTG30N60A4 combines the best features of high input
impedance of a ...
IGBT - SMPS 600 V, 60 A
HGTG30N60A4
Description The HGTG30N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar
transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.
Features
60 A, 600 V @ TC = 110°C Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 30 A Typical Fall Time: 58 ns at TJ = 125°C Low Conduction Loss This is a Pb−Free Device
Applications
UPS, Welder
www.onsemi.com C
G E EC G
TO−247−3LD CASE 340CK MARKING DIAGRAM
$Y&Z&3&K G30N60A4
© Semiconductor Components Industries, LLC, 2005
February, 2020 − Rev. 3
$Y &Z &3 &K G30N60A4
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: HGTG30N60A4/D
HGTG30N60A4
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter
Symbol
Ratings
Unit
Collector to Emitter Voltage Collector Current Continuous
TC = 25°C TC = 110°C
BVCES IC
600 V 75 A 60 A
Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C, Figure 2 Power Dissipation Total Power Dissipation Derating
TC = 25°C TC > 25°C
ICM VGES VGEM SSOA
PD
240 ±20 ±30 15...