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FGH20N60SFDTU-F085

ON Semiconductor

IGBT

IGBT - Field Stop 600 V, 20 A FGH20N60SFDTU, FGH20N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON S...


ON Semiconductor

FGH20N60SFDTU-F085

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Description
IGBT - Field Stop 600 V, 20 A FGH20N60SFDTU, FGH20N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A High Input Impedance Fast Switching Qualified to Automotive Requirements of AEC−Q101 (FGH20N60SFDTU−F085) These Devices are Pb−Free and are RoHS Compliant Applications Automotive Chargers, Converters, High Voltage Auxiliaries Inverters, PFC, UPS www.onsemi.com C G E EC G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH20N60 SFD $Y&Z&3&K FGH20N60 SFDTU © Semiconductor Components Industries, LLC, 2015 February, 2020 − Rev. 3 Industrial Automotive $Y &Z &3 &K FGH20N60SFD, FGH20N60SFDTU = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FGH20N60SFDTU−F085/D FGH20N60SFDTU, FGH20N60SFDTU−F085 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate−to−Emitter Voltage VCES VGES 600 V ±20 V ±30 V Collector Current TC = 25°C IC 40 A TC = 100°C 20 A Pulsed Collector Current Maximum Power Dissipation TC = 25°C TC =...




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