FGHL50T65SQDT

IGBT - Field Stop, Trench 650 V, 50 A Product Preview FGHL50T65SQDT Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features Maximum Junction Temperature : TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.47 V (Typ.) @ IC = 50 A 100% of the Parts tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution This Device is Pb−Free and is RoHS Compliant Typical Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC Table 1. MAXIMUM RATING Symbol Rating Value Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 650 V ±20 V ±30 IC ILM ICM IF IFM PD TJ, TSTG Collector Current @ TC = 25°C @ TC = 100°C 100 50 Pulsed Collector Current (Note 1) 200 Pulsed Collector Current (Note 2) 200 Diode Forward Current @ TC = 25°C @ TC = 100°C 75 50 Pulsed Diode Maximum Forward Current 300 Maximum Power Dissipation @ TC = 25°C @ TC = 100°C 268 134 Operating Junction / Storage Temperature −55 to +175 Range A A A A A W °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5 seconds 265 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. ...