FGH30N60LSD

IGBT - PT 600 V, 30 A FGH30N60LSD Description Using ON Semiconductor ’s advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor. Features Low Saturation Voltage: VCE(sat) =1.1 V @ IC = 30 A High Input Impedance Low Conduction Loss This Device is Pb−Free and is RoHS Compliant Applications Solar Inverter, UPS www.onsemi.com C G E EC G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH30N60 LSD $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH30N60LSD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 February, 2020 − Rev. 3 1 Publication Order Number: FGH30N60LSD/D FGH30N60LSD ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Description Symbol Rating Unit Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Non−repetitive Peak Surge Current 60 Hz Single Half−Sine Wave VCES VGES IC ICM (Note 1) IFSM 600 ±20 60 30 90 150 V V A A A A Maximum Power Dissipation TC = 25°C PD 480 W Maximum Power Dissipation TC = 100°C 192 W Operating Junction Temperature TJ −55 to +150 ...