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NXH450B100H4Q2F2

ON Semiconductor

Si/SiC Hybrid Module

Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode, Q2 Package NXH450...


ON Semiconductor

NXH450B100H4Q2F2

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Description
Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode, Q2 Package NXH450B100H4Q2F2, NXH450B100H4Q2F2PG-R Description The NXH450B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor. Features Silicon/SiC Hybrid Technology Maximizes Power Density Low Switching Loss Reduces System Power Dissipation Low Inductive Layout Press−fit and Solder Pin Options This Device is Pb−Free, Halogen Free and is RoHS Compliant Typical Applications Solar Inverter Uninterruptible Power Supplies DATA SHEET www.onsemi.com Q2BOOST 3−CHANNEL PRESS FIT PINS CASE 180BG Q2BOOST 3−CHANNEL SOLDER PINS CASE 180BR MARKING DIAGRAM NXH450B100H4Q2F2PG/PG−R/SG ATYYWW Figure 1. NXH450B100H4Q2F2PG/PG−R/SG Schematic Diagram G = Pb− Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code NXH450B100H4Q2F2PG/PG−R/SG = Specific Device Code PIN CONNECTIONS See details pin connections on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2019 1 March, 2023 − Rev. 2 Publication Order Number: NXH450B100H4Q2F2/D NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R Figure 2. Pins Assignments ABSOLUTE MAXIMUM RATINGS (Note 1) (Tj = 25°C unless otherwise noted) Rating ...




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