AFGHL50T65SQ

Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand−alone IGBT. Features AEC−Q101 Qualified Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution RoHS Compliant Typical Applications Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters Totem Pole Bridgeless PFC PTC MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES VGES 650 ±20 ±30 V V Collector Current (Note 1) @ TC = 25°C @ TC = 100°C Pulsed Collector Current (Note 2) Pulsed Collector Current (Note 3) Maximum Power Dissipation @ TC = 25°C @ TC = 100°C Operating Junction / Storage Temperature Range IC 80 50 ILM 200 ICM 200 PD 268 134 TJ, TSTG −55 to +175 A A A W °C Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be ...