AFGHL40T65SQD

Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SQD Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. Features AEC−Q101 Qualified Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution RoHS Compliant Typical Applications Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters Totem Pole Bridgeless PFC PTC MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES 650 V VGES ±20 V ±30 Collector Current (Note 1) @ TC = 25°C IC 80 A @ TC = 100°C 40 Pulsed Collector Current (Note 2) ILM 160 A Pulsed Collector Current (Note 3) ICM 160 A Diode Forward Current @ TC < 25°C IF 80 A (Note 1) @ TC < 100°C 20 Pulsed Diode Maximum Forward Current IFM(2) 160 A Maximum Power Dissipation @ TC = 25°C PD 238 W @ TC = 100°C 119 Operating Junction / Storage Temperature Range TJ, TSTG −55 to °C +175 Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the de...