STEALTHt Diode
30 A, 600 V
ISL9R3060G2, ISL9R3060P2
Description The ISL9R3060G2, ISL9R3060P2 is a STEALTH t diode
optimi...
STEALTHt Diode
30 A, 600 V
ISL9R3060G2, ISL9R3060P2
Description The ISL9R3060G2, ISL9R3060P2 is a STEALTH t diode
optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching
transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Features
Stealth Recovery, trr = 36 ns (@ IF = 30 A) Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb−Free and is RoHS Compliant
Applications
SMPS Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode
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JEDEC STYLE 2 LEAD TO−247−2L
CATHODE (BOTTOM SIDE METAL)
ANODE CATHODE
JEDEC TO−220AC−2L
CATHODE (FLANGE)
CATHODE ANODE
MARKING DIAGRAM
$Y&Z&3&K R3060X2
$Y &Z &3 &K R3060X2 X
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code =G/P
K
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