ISL9R3060G2

STEALTHt Diode 30 A, 600 V ISL9R3060G2, ISL9R3060P2 Description The ISL9R3060G2, ISL9R3060P2 is a STEALTH t diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Features Stealth Recovery, trr = 36 ns (@ IF = 30 A) Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb−Free and is RoHS Compliant Applications SMPS Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode www.onsemi.com JEDEC STYLE 2 LEAD TO−247−2L CATHODE (BOTTOM SIDE METAL) ANODE CATHODE JEDEC TO−220AC−2L CATHODE (FLANGE) CATHODE ANODE MARKING DIAGRAM $Y&Z&3&K R3060X2 $Y &Z &3 &K R3060X2 X = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code =G/P K © Semiconductor Components Industries, LLC, ...